Paper Abstract and Keywords |
Presentation |
2010-12-17 10:35
[Invited Talk]
GaN Devices on Low Cost Substrates for Long-distance Millimeter-wave Communication Hiroyuki Sakai, Masayuki Kuroda, Noboru Negoro, Tomohiro Murata, Shuichi Nagai, Masaaki Nishijima, Yoshiharu Anda, Tetsuzo Ueda, Tsuyoshi Tanaka (Panasonic) ED2010-167 Link to ES Tech. Rep. Archives: ED2010-167 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We present GaN Devices on low cost substrates for long-distance millimeter-wave communication. Sapphire substrates are used for receiver devices. A Microstrip line based MMIC which shows a gain of 22dB at 26GHz is fabricated by using laser drilling technique on the sapphire substrate. A novel chip size package using the sapphire substrate is also demonstrated. Si substrates are used for transmitter devices. Fabricated transistor which has crystalline SiN gate insulator exhibits an output power as high as 10.7W at 26.5GHz, 55V supply voltage. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
GaN / millimeter-wave / Si / sapphire / long-distance communication / amplifier / chip size package / |
Reference Info. |
IEICE Tech. Rep., vol. 110, no. 342, ED2010-167, pp. 53-58, Dec. 2010. |
Paper # |
ED2010-167 |
Date of Issue |
2010-12-09 (ED) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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ED2010-167 Link to ES Tech. Rep. Archives: ED2010-167 |