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Paper Abstract and Keywords
Presentation 2010-12-17 10:35
[Invited Talk] GaN Devices on Low Cost Substrates for Long-distance Millimeter-wave Communication
Hiroyuki Sakai, Masayuki Kuroda, Noboru Negoro, Tomohiro Murata, Shuichi Nagai, Masaaki Nishijima, Yoshiharu Anda, Tetsuzo Ueda, Tsuyoshi Tanaka (Panasonic) ED2010-167
Abstract (in Japanese) (See Japanese page) 
(in English) We present GaN Devices on low cost substrates for long-distance millimeter-wave communication. Sapphire substrates are used for receiver devices. A Microstrip line based MMIC which shows a gain of 22dB at 26GHz is fabricated by using laser drilling technique on the sapphire substrate. A novel chip size package using the sapphire substrate is also demonstrated. Si substrates are used for transmitter devices. Fabricated transistor which has crystalline SiN gate insulator exhibits an output power as high as 10.7W at 26.5GHz, 55V supply voltage.
Keyword (in Japanese) (See Japanese page) 
(in English) GaN / millimeter-wave / Si / sapphire / long-distance communication / amplifier / chip size package /  
Reference Info. IEICE Tech. Rep., vol. 110, no. 342, ED2010-167, pp. 53-58, Dec. 2010.
Paper # ED2010-167 
Date of Issue 2010-12-09 (ED) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2010-167

Conference Information
Committee ED  
Conference Date 2010-12-16 - 2010-12-17 
Place (in Japanese) (See Japanese page) 
Place (in English) Tohoku University (Research Institute of Electrical Communication) 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Millimeter wave, terahertz devices and systems 
Paper Information
Registration To ED 
Conference Code 2010-12-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) GaN Devices on Low Cost Substrates for Long-distance Millimeter-wave Communication 
Sub Title (in English)  
Keyword(1) GaN  
Keyword(2) millimeter-wave  
Keyword(3) Si  
Keyword(4) sapphire  
Keyword(5) long-distance communication  
Keyword(6) amplifier  
Keyword(7) chip size package  
Keyword(8)  
1st Author's Name Hiroyuki Sakai  
1st Author's Affiliation Panasonic Corporation (Panasonic)
2nd Author's Name Masayuki Kuroda  
2nd Author's Affiliation Panasonic Corporation (Panasonic)
3rd Author's Name Noboru Negoro  
3rd Author's Affiliation Panasonic Corporation (Panasonic)
4th Author's Name Tomohiro Murata  
4th Author's Affiliation Panasonic Corporation (Panasonic)
5th Author's Name Shuichi Nagai  
5th Author's Affiliation Panasonic Corporation (Panasonic)
6th Author's Name Masaaki Nishijima  
6th Author's Affiliation Panasonic Corporation (Panasonic)
7th Author's Name Yoshiharu Anda  
7th Author's Affiliation Panasonic Corporation (Panasonic)
8th Author's Name Tetsuzo Ueda  
8th Author's Affiliation Panasonic Corporation (Panasonic)
9th Author's Name Tsuyoshi Tanaka  
9th Author's Affiliation Panasonic Corporation (Panasonic)
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Speaker Author-1 
Date Time 2010-12-17 10:35:00 
Presentation Time 40 minutes 
Registration for ED 
Paper # ED2010-167 
Volume (vol) vol.110 
Number (no) no.342 
Page pp.53-58 
#Pages 6 
Date of Issue 2010-12-09 (ED) 

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