講演抄録/キーワード |
講演名 |
2010-12-17 10:55
Development of Procedure for Modeling MOSFET Compatible with ITRS
-- Noise and I-V Characteristics Modeling for RF/Analog MOSFET -- ○Sin-Nyoung Kim・Akira Tsuchiya・Hidetoshi Onodera(Kyoto Univ.) ICD2010-119 エレソ技報アーカイブへのリンク:ICD2010-119 |
抄録 |
(和) |
A procedure for modeling MOSFET compatible with ITRS is proposed. Compared to the PTM, this work focuses on how to generate the predictive MOSFET model cards.
Achieving the predictive MOSFET model cards from digital to RF/analog circuit design, this procedure facilitates early design research and supports joint technology-design exploration for optimal nanoscale integration. |
(英) |
A procedure for modeling MOSFET compatible with ITRS is proposed. Compared to the PTM, this work focuses on how to generate the predictive MOSFET model cards.
Achieving the predictive MOSFET model cards from digital to RF/analog circuit design, this procedure facilitates early design research and supports joint technology-design exploration for optimal nanoscale integration. |
キーワード |
(和) |
Predictive model / Procedure for modeling / Model card generation / RF/analog MOSFET / Intermediate model / Compatibility with ITRS / Prediction of noise / |
(英) |
Predictive model / Procedure for modeling / Model card generation / RF/analog MOSFET / Intermediate model / Compatibility with ITRS / Prediction of noise / |
文献情報 |
信学技報, vol. 110, no. 344, ICD2010-119, pp. 119-123, 2010年12月. |
資料番号 |
ICD2010-119 |
発行日 |
2010-12-09 (ICD) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
著作権に ついて |
技術研究報告に掲載された論文の著作権は電子情報通信学会に帰属します.(許諾番号:10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
PDFダウンロード |
ICD2010-119 エレソ技報アーカイブへのリンク:ICD2010-119 |