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Paper Abstract and Keywords
Presentation 2010-12-17 16:50
High-power blue-violet laser diodes with window structure
Masao Kawaguchi, Hideki Kasugai, Katsuya Samonji, Hiroyuki Hagino, Kenji Orita, Kazuhiko Yamanaka, Yuri Masaaki, Shinichi Takigawa (Panasonic) LQE2010-127
Abstract (in Japanese) (See Japanese page) 
(in English) High-power GaN-based laser diodes (LDs) are expected as light-source of various high-power applications. The catastrophic-optical-damage (COD) is a major failure mechanism to limit the output power, where optical absorption at a light-emitting facet causes an irreversible damage to the LDs. In this paper, a window structure in InGaN-based LDs to suppress the COD is demonstrated for the first time. The structure is formed by the MOCVD (metal organic chemical vapor deposition) growth over a recess placed besides of the ridge-waveguide. The In composition in the QW is reduced by controlling the local orientation angle at the sidewall of the recess. Thus formed window structure eliminates undesired optical absorption at the cleaved facet so that extremely high output power over 2W in narrow-stripe ridge-waveguide InGaN-based blue-violet LDs is achieved without any CODs.
Keyword (in Japanese) (See Japanese page) 
(in English) High-power / Gallium nitride / Laser diode / Window structure / / / /  
Reference Info. IEICE Tech. Rep., vol. 110, no. 353, LQE2010-127, pp. 59-62, Dec. 2010.
Paper # LQE2010-127 
Date of Issue 2010-12-10 (LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee LQE  
Conference Date 2010-12-17 - 2010-12-17 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To LQE 
Conference Code 2010-12-LQE 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) High-power blue-violet laser diodes with window structure 
Sub Title (in English)  
Keyword(1) High-power  
Keyword(2) Gallium nitride  
Keyword(3) Laser diode  
Keyword(4) Window structure  
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1st Author's Name Masao Kawaguchi  
1st Author's Affiliation Panasonic Corporation (Panasonic)
2nd Author's Name Hideki Kasugai  
2nd Author's Affiliation Panasonic Corporation (Panasonic)
3rd Author's Name Katsuya Samonji  
3rd Author's Affiliation Panasonic Corporation (Panasonic)
4th Author's Name Hiroyuki Hagino  
4th Author's Affiliation Panasonic Corporation (Panasonic)
5th Author's Name Kenji Orita  
5th Author's Affiliation Panasonic Corporation (Panasonic)
6th Author's Name Kazuhiko Yamanaka  
6th Author's Affiliation Panasonic Corporation (Panasonic)
7th Author's Name Yuri Masaaki  
7th Author's Affiliation Panasonic Corporation (Panasonic)
8th Author's Name Shinichi Takigawa  
8th Author's Affiliation Panasonic Corporation (Panasonic)
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Speaker Author-1 
Date Time 2010-12-17 16:50:00 
Presentation Time 25 minutes 
Registration for LQE 
Paper # LQE2010-127 
Volume (vol) vol.110 
Number (no) no.353 
Page pp.59-62 
#Pages 4 
Date of Issue 2010-12-10 (LQE) 

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