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Paper Abstract and Keywords
Presentation 2011-01-14 13:50
New Stacked Metal-Insulator-Metal Capacitor for future InP-based ICs Applications
Takuya Tsutsumi, Suehiro Sugitani, Kazumi Nishimura, Minoru Ida (NTT) ED2010-189 MW2010-149
Abstract (in Japanese) (See Japanese page) 
(in English) Increasing the capacitance density would be a very effective way of making InP IC chips smaller because capacitors occupy a
large area of the chips. As a way of increasing capacitance density, we propose new stacked metal-insulator-metal (MIM) capacitors that
can be fabricated by using only two additional masks alternately and repeatedly. The capacitors can also be fabricated with a short
turn-around time by forming side contact via, which allows each MIM electrode to connect to each other electrically all at once. In the
proposed capacitors with five and three stacked layers, the capacitance density increases by a factor of 5 (1.47 fF/um2) and 3 (1.72 fF/um2) ,
when 175- and 100-nm-thick SiN is used, respectively. The leakage current level is the same as that of a single-layer MIM capacitor. And
RF characteristics of three-layer capacitor with 100-nm-thick SiN show very low parasitic inductance, which is the same as single-layer
capacitor.
Keyword (in Japanese) (See Japanese page) 
(in English) Stacked MIM capacitor / Side contact / InP-IC / RF application / / / /  
Reference Info. IEICE Tech. Rep., vol. 110, no. 358, ED2010-189, pp. 75-80, Jan. 2011.
Paper # ED2010-189 
Date of Issue 2011-01-06 (ED, MW) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2010-189 MW2010-149

Conference Information
Committee MW ED  
Conference Date 2011-01-13 - 2011-01-14 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Compound Semiconductor IC and High-Speed, High-Frequency Devices/Microwave Technologies 
Paper Information
Registration To ED 
Conference Code 2011-01-MW-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) New Stacked Metal-Insulator-Metal Capacitor for future InP-based ICs Applications 
Sub Title (in English)  
Keyword(1) Stacked MIM capacitor  
Keyword(2) Side contact  
Keyword(3) InP-IC  
Keyword(4) RF application  
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Keyword(6)  
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Keyword(8)  
1st Author's Name Takuya Tsutsumi  
1st Author's Affiliation NTT Photonics Laboratories (NTT)
2nd Author's Name Suehiro Sugitani  
2nd Author's Affiliation NTT Photonics Laboratories (NTT)
3rd Author's Name Kazumi Nishimura  
3rd Author's Affiliation NTT Photonics Laboratories (NTT)
4th Author's Name Minoru Ida  
4th Author's Affiliation NTT Photonics Laboratories (NTT)
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Speaker Author-1 
Date Time 2011-01-14 13:50:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2010-189, MW2010-149 
Volume (vol) vol.110 
Number (no) no.358(ED), no.359(MW) 
Page pp.75-80 
#Pages 6 
Date of Issue 2011-01-06 (ED, MW) 

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