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Paper Abstract and Keywords
Presentation 2011-01-29 09:55
Deposition of Insulator Film with New Facing Electrodes CVD for Low Temperature Devices
Tokiyoshi Matsuda, Mamoru Furuta, Takahiro Hiramatsu, Hiroshi Furuta, Takashi Hirao (Kochi Univ. of Technol.) EID2010-35
Abstract (in Japanese) (See Japanese page) 
(in English) Insulating SiO_{\it x} film was deposited at low temperature with newly developed plasma source for low heat resistive substrate as for flexible display. The plasma was induced with electromagnetic field generated by two facing electrodes including magnets inside and covered with SiO_{2} targets. The higher deposition rate was realized with the mixture of tetramethylsilane and oxygen as source gases. The insulating properties were obtained as 3E-8 A/cm^{2} at an electric field of 1 MV/cm, and a breakdown voltage of 5 MV/cm at 1E-6 A/cm^{2} for the film deposition rate at 11 nm/min. High density plasma enhanced by magnetic field would be the hopeful solution for deposition of high deposition rate gate insulator at low temperature.
Keyword (in Japanese) (See Japanese page) 
(in English) Thin film transistor / gate insulator / chemical vapor deposition (CVD) / FT-IR / Film substrate / plasma / electrical property / dielectric  
Reference Info. IEICE Tech. Rep., vol. 110, no. 404, EID2010-35, pp. 87-90, Jan. 2011.
Paper # EID2010-35 
Date of Issue 2011-01-21 (EID) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee EID ITE-IDY IEE-EDD IEIJ-SSL  
Conference Date 2011-01-28 - 2011-01-29 
Place (in Japanese) (See Japanese page) 
Place (in English) Kochi University of Technology 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Display technology, etc 
Paper Information
Registration To EID 
Conference Code 2011-01-EID-IDY-EDD-OMD 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Deposition of Insulator Film with New Facing Electrodes CVD for Low Temperature Devices 
Sub Title (in English)  
Keyword(1) Thin film transistor  
Keyword(2) gate insulator  
Keyword(3) chemical vapor deposition (CVD)  
Keyword(4) FT-IR  
Keyword(5) Film substrate  
Keyword(6) plasma  
Keyword(7) electrical property  
Keyword(8) dielectric  
1st Author's Name Tokiyoshi Matsuda  
1st Author's Affiliation Kochi University of Technology (Kochi Univ. of Technol.)
2nd Author's Name Mamoru Furuta  
2nd Author's Affiliation Kochi University of Technology (Kochi Univ. of Technol.)
3rd Author's Name Takahiro Hiramatsu  
3rd Author's Affiliation Kochi University of Technology (Kochi Univ. of Technol.)
4th Author's Name Hiroshi Furuta  
4th Author's Affiliation Kochi University of Technology (Kochi Univ. of Technol.)
5th Author's Name Takashi Hirao  
5th Author's Affiliation Kochi University of Technology (Kochi Univ. of Technol.)
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Speaker Author-1 
Date Time 2011-01-29 09:55:00 
Presentation Time 5 minutes 
Registration for EID 
Paper # EID2010-35 
Volume (vol) vol.110 
Number (no) no.404 
Page pp.87-90 
#Pages 4 
Date of Issue 2011-01-21 (EID) 

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