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Paper Abstract and Keywords
Presentation 2011-02-24 09:30
Fabrication of GaAs-based Nanowire CCD Controlled by Schottky Wrap Gates and Characterization of Its Charge Transfer Operation
Yuki Nakano, Kensuke Miura, Yuta Shiratori (Hokkaido Univ.), Seiya Kasai (Hokkaido Univ./JST) ED2010-200 SDM2010-235
Abstract (in Japanese) (See Japanese page) 
(in English) For synchronization of nanowire-based integrated circuits，a GaAs nanowire charge-coupled device (CCD) controlled by Schottky wrap gates is fabricated and its charge transfer operation is characterized．The charge packet is transferred successively by clocked signals on two wrap gates．Measured DC current in the fabricated device depends linearly on the clock frequency．The current is found to independent on temperature．The obtained results confirm synchronized charge transfer in the present device．
Keyword (in Japanese) (See Japanese page) 
(in English) GaAs Nanowire / CCD / Charge Transfer / / / / /  
Reference Info. IEICE Tech. Rep., vol. 110, no. 423, ED2010-200, pp. 49-52, Feb. 2011.
Paper # ED2010-200 
Date of Issue 2011-02-16 (ED, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2010-200 SDM2010-235

Conference Information
Committee SDM ED  
Conference Date 2011-02-23 - 2011-02-24 
Place (in Japanese) (See Japanese page) 
Place (in English) Hokkaido Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Functional nanodevices and related technologies 
Paper Information
Registration To ED 
Conference Code 2011-02-SDM-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Fabrication of GaAs-based Nanowire CCD Controlled by Schottky Wrap Gates and Characterization of Its Charge Transfer Operation 
Sub Title (in English)  
Keyword(1) GaAs Nanowire  
Keyword(2) CCD  
Keyword(3) Charge Transfer  
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1st Author's Name Yuki Nakano  
1st Author's Affiliation Hokkaido University (Hokkaido Univ.)
2nd Author's Name Kensuke Miura  
2nd Author's Affiliation Hokkaido University (Hokkaido Univ.)
3rd Author's Name Yuta Shiratori  
3rd Author's Affiliation Hokkaido University (Hokkaido Univ.)
4th Author's Name Seiya Kasai  
4th Author's Affiliation Hokkaido University/PRESTO JST (Hokkaido Univ./JST)
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Speaker Author-1 
Date Time 2011-02-24 09:30:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2010-200, SDM2010-235 
Volume (vol) vol.110 
Number (no) no.423(ED), no.424(SDM) 
Page pp.49-52 
#Pages 4 
Date of Issue 2011-02-16 (ED, SDM) 

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