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| Presentation | 2011-07-04 11:40 Evaluation of Light Induced Damages in Plasma Process on Electrical Properties of Al2O3/Ge Gate Stack Structure Kusuman Dari, Wakana Takeuchi, Kimihiko Kato, Shigehisa Shibayama, Mitsuo Sakashita, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.)  SDM2011-57 Link to ES Tech. Rep. Archives: SDM2011-57 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | We have investigated the effect of light induced damages on the electrical properties of the Al2O3/Ge gate stack structure during nitrogen plasma process. From capacitance-voltage characteristics, we observed the negative flatband voltage shift due to increasing of the net density of positive fixed oxide charge after the light exposure with a photon energy over 7.5 eV. The density of trapped charge and the interface state density significantly increase after the light exposure with a photon energy over 11.3 eV. We also found that these damages can be recovered by the post metallization annealing at 300ºC. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | germanium / aluminum oxide / gate stack structure / MOS structure / plasma process / defects / degradation / interface state density | |
| Reference Info. | IEICE Tech. Rep., vol. 111, no. 114, SDM2011-57, pp. 41-46, July 2011. | |
| Paper # | SDM2011-57 | |
| Date of Issue | 2011-06-27 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2011-57 Link to ES Tech. Rep. Archives: SDM2011-57 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2011-07-04 - 2011-07-04 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | VBL, Nagoya Univ. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Science and Technology for Dielectric Thin Films for Electron Devices |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2011-07-SDM |
| Language | English |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Evaluation of Light Induced Damages in Plasma Process on Electrical Properties of Al2O3/Ge Gate Stack Structure |
| Sub Title (in English) | |
| Keyword(1) | germanium |
| Keyword(2) | aluminum oxide |
| Keyword(3) | gate stack structure |
| Keyword(4) | MOS structure |
| Keyword(5) | plasma process |
| Keyword(6) | defects |
| Keyword(7) | degradation |
| Keyword(8) | interface state density |
| 1st Author's Name | Kusuman Dari |
| 1st Author's Affiliation | Nagoya University (Nagoya Univ.) |
| 2nd Author's Name | Wakana Takeuchi |
| 2nd Author's Affiliation | Nagoya University (Nagoya Univ.) |
| 3rd Author's Name | Kimihiko Kato |
| 3rd Author's Affiliation | Nagoya University (Nagoya Univ.) |
| 4th Author's Name | Shigehisa Shibayama |
| 4th Author's Affiliation | Nagoya University (Nagoya Univ.) |
| 5th Author's Name | Mitsuo Sakashita |
| 5th Author's Affiliation | Nagoya University (Nagoya Univ.) |
| 6th Author's Name | Osamu Nakatsuka |
| 6th Author's Affiliation | Nagoya University (Nagoya Univ.) |
| 7th Author's Name | Shigeaki Zaima |
| 7th Author's Affiliation | Nagoya University (Nagoya Univ.) |
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| Speaker | Author-1 |
| Date Time | 2011-07-04 11:40:00 |
| Presentation Time | 20 minutes |
| Registration for | SDM |
| Paper # | SDM2011-57 |
| Volume (vol) | vol.111 |
| Number (no) | no.114 |
| Page | pp.41-46 |
| #Pages | 6 |
| Date of Issue | 2011-06-27 (SDM) |
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