Paper Abstract and Keywords |
Presentation |
2011-07-04 09:20
Structure and formation of epitaxial graphene on SiC(0001) Hiroyuki Kageshima, Hiroki Hibino, Hiroshi Yamaguchi (NTT Basic Research Labs.), Masao Nagase (Univ. Tokushima) SDM2011-51 Link to ES Tech. Rep. Archives: SDM2011-51 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Epitaxial graphene growth on SiC(0001) surface is theoretically studied by the first-principles calculation. It is found that a sheet of graphene at the interface acts as the buffer layer, and that new graphene sheets grow from the interface between the buffer layer and the SiC substrate surface. It is also found that the graphene island on SiC(0001) surface has an embedded structure, which is formed by the aggregation of Si-substitutional C after Si sublimation and C adsorption. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
graphene / SiC / epitaxial growth / first-principles calculation / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 111, no. 114, SDM2011-51, pp. 7-10, July 2011. |
Paper # |
SDM2011-51 |
Date of Issue |
2011-06-27 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
SDM2011-51 Link to ES Tech. Rep. Archives: SDM2011-51 |
Conference Information |
Committee |
SDM |
Conference Date |
2011-07-04 - 2011-07-04 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
VBL, Nagoya Univ. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Science and Technology for Dielectric Thin Films for Electron Devices |
Paper Information |
Registration To |
SDM |
Conference Code |
2011-07-SDM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Structure and formation of epitaxial graphene on SiC(0001) |
Sub Title (in English) |
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graphene |
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SiC |
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epitaxial growth |
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first-principles calculation |
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1st Author's Name |
Hiroyuki Kageshima |
1st Author's Affiliation |
NTT Basic Research Laboratories (NTT Basic Research Labs.) |
2nd Author's Name |
Hiroki Hibino |
2nd Author's Affiliation |
NTT Basic Research Laboratories (NTT Basic Research Labs.) |
3rd Author's Name |
Hiroshi Yamaguchi |
3rd Author's Affiliation |
NTT Basic Research Laboratories (NTT Basic Research Labs.) |
4th Author's Name |
Masao Nagase |
4th Author's Affiliation |
University of Tokushima (Univ. Tokushima) |
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Speaker |
Author-1 |
Date Time |
2011-07-04 09:20:00 |
Presentation Time |
20 minutes |
Registration for |
SDM |
Paper # |
SDM2011-51 |
Volume (vol) |
vol.111 |
Number (no) |
no.114 |
Page |
pp.7-10 |
#Pages |
4 |
Date of Issue |
2011-06-27 (SDM) |