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Paper Abstract and Keywords
Presentation 2011-07-04 09:20
Structure and formation of epitaxial graphene on SiC(0001)
Hiroyuki Kageshima, Hiroki Hibino, Hiroshi Yamaguchi (NTT Basic Research Labs.), Masao Nagase (Univ. Tokushima) SDM2011-51 Link to ES Tech. Rep. Archives: SDM2011-51
Abstract (in Japanese) (See Japanese page) 
(in English) Epitaxial graphene growth on SiC(0001) surface is theoretically studied by the first-principles calculation. It is found that a sheet of graphene at the interface acts as the buffer layer, and that new graphene sheets grow from the interface between the buffer layer and the SiC substrate surface. It is also found that the graphene island on SiC(0001) surface has an embedded structure, which is formed by the aggregation of Si-substitutional C after Si sublimation and C adsorption.
Keyword (in Japanese) (See Japanese page) 
(in English) graphene / SiC / epitaxial growth / first-principles calculation / / / /  
Reference Info. IEICE Tech. Rep., vol. 111, no. 114, SDM2011-51, pp. 7-10, July 2011.
Paper # SDM2011-51 
Date of Issue 2011-06-27 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2011-51 Link to ES Tech. Rep. Archives: SDM2011-51

Conference Information
Committee SDM  
Conference Date 2011-07-04 - 2011-07-04 
Place (in Japanese) (See Japanese page) 
Place (in English) VBL, Nagoya Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Science and Technology for Dielectric Thin Films for Electron Devices 
Paper Information
Registration To SDM 
Conference Code 2011-07-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Structure and formation of epitaxial graphene on SiC(0001) 
Sub Title (in English)  
Keyword(1) graphene  
Keyword(2) SiC  
Keyword(3) epitaxial growth  
Keyword(4) first-principles calculation  
1st Author's Name Hiroyuki Kageshima  
1st Author's Affiliation NTT Basic Research Laboratories (NTT Basic Research Labs.)
2nd Author's Name Hiroki Hibino  
2nd Author's Affiliation NTT Basic Research Laboratories (NTT Basic Research Labs.)
3rd Author's Name Hiroshi Yamaguchi  
3rd Author's Affiliation NTT Basic Research Laboratories (NTT Basic Research Labs.)
4th Author's Name Masao Nagase  
4th Author's Affiliation University of Tokushima (Univ. Tokushima)
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Speaker Author-1 
Date Time 2011-07-04 09:20:00 
Presentation Time 20 minutes 
Registration for SDM 
Paper # SDM2011-51 
Volume (vol) vol.111 
Number (no) no.114 
Page pp.7-10 
Date of Issue 2011-06-27 (SDM) 

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