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| Presentation | 2011-07-04 12:00 Control of Interfacial Ractions in HfO2 Atomic-Layer-Deposition on Ge(100) and Post-deposition Anneal with Ultrathin TiOx Capping on Ge(100) Hideki Murakami, Tomohiro Fujioka, Akio Ohta, Kento Mishima, Seiichiro Higashi (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.)  SDM2011-58 Link to ES Tech. Rep. Archives: SDM2011-58 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | To control interfacial reaction between high-k dielectric and Ge(100) we focused on insertion of TiOx ultrathin layer with a high permittivity(ε:50-80) as a interfacial barrier layer and studied atomic-layer controlled CVD process of TiO2 on HCl-treated Ge(100). In order to suppress the growth of GeOx layer with a low permittivity during the formation of high-k dielectric such as HfO2, TiOx (x<2) ultrathin layers were formed on Ge(100) by repeating saturated adsorption of TEMAT and its thermal decomposition. X-ray photoelectron spectroscopy after HfO2 layer formation on TiOx/Ge(100) show that Ge atoms diffusion in the HfO2 layer is efficiently suppressed by inserting TiOx thicker than 2nm. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Ge-Channel / Atomic Layer Deposition / Interfacial Reaction / Chemical Bonding Feature / XPS / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 111, no. 114, SDM2011-58, pp. 47-50, July 2011. | |
| Paper # | SDM2011-58 | |
| Date of Issue | 2011-06-27 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2011-58 Link to ES Tech. Rep. Archives: SDM2011-58 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2011-07-04 - 2011-07-04 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | VBL, Nagoya Univ. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Science and Technology for Dielectric Thin Films for Electron Devices |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2011-07-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Control of Interfacial Ractions in HfO2 Atomic-Layer-Deposition on Ge(100) and Post-deposition Anneal with Ultrathin TiOx Capping on Ge(100) |
| Sub Title (in English) | |
| Keyword(1) | Ge-Channel |
| Keyword(2) | Atomic Layer Deposition |
| Keyword(3) | Interfacial Reaction |
| Keyword(4) | Chemical Bonding Feature |
| Keyword(5) | XPS |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Hideki Murakami |
| 1st Author's Affiliation | Hiroshima University (Hiroshima Univ.) |
| 2nd Author's Name | Tomohiro Fujioka |
| 2nd Author's Affiliation | Hiroshima University (Hiroshima Univ.) |
| 3rd Author's Name | Akio Ohta |
| 3rd Author's Affiliation | Hiroshima University (Hiroshima Univ.) |
| 4th Author's Name | Kento Mishima |
| 4th Author's Affiliation | Hiroshima University (Hiroshima Univ.) |
| 5th Author's Name | Seiichiro Higashi |
| 5th Author's Affiliation | Hiroshima University (Hiroshima Univ.) |
| 6th Author's Name | Seiichi Miyazaki |
| 6th Author's Affiliation | Nagoya University (Nagoya Univ.) |
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| Speaker | Author-1 |
| Date Time | 2011-07-04 12:00:00 |
| Presentation Time | 20 minutes |
| Registration for | SDM |
| Paper # | SDM2011-58 |
| Volume (vol) | vol.111 |
| Number (no) | no.114 |
| Page | pp.47-50 |
| #Pages | 4 |
| Date of Issue | 2011-06-27 (SDM) |
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