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Paper Abstract and Keywords
Presentation 2011-08-25 10:50
Plasma Doping and Laser Spike Annealing Technique for Steep SDE Formation in nano-scale MOSFET
Emiko Sugizaki, Toshitaka Miyata, Yasunori Oshima, Akira Hokazono, Kanna Adachi, Kiyotaka Miyano, Hideji Tsujii, Shigeru Kawanaka, Satoshi Inaba, Takaharu Itani, Toshihiko Iinuma, Yoshiaki Toyoshima (Toshiba) SDM2011-75 ICD2011-43
Abstract (in Japanese) (See Japanese page) 
(in English) The importance of impurity profile design for Source/Drain Extension (SDE) is widely recognized for deeply scaled MOSFET. In this paper, novel SDE formation scheme in planar pMOSFET is discussed using Plasma Doping (PD) and Laser Spike Annealing (LSA),comparing with conventional Ion Implantation (I/I) technique. It is found that the combination of PD and high-temperature LSA canrealize the abrupt boron profile and an additive efficiency of halo doping in channel region.
Keyword (in Japanese) (See Japanese page) 
(in English) MOSFET / Plasma Doping / Laser Spike Annealing / Halo doping / / / /  
Reference Info. IEICE Tech. Rep., vol. 111, no. 187, SDM2011-75, pp. 23-27, Aug. 2011.
Paper # SDM2011-75 
Date of Issue 2011-08-18 (SDM, ICD) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2011-75 ICD2011-43

Conference Information
Committee SDM ICD  
Conference Date 2011-08-25 - 2011-08-26 
Place (in Japanese) (See Japanese page) 
Place (in English) Toyama kenminkaikan 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Low voltage/low power techniques, novel devices, circuits, and applications 
Paper Information
Registration To SDM 
Conference Code 2011-08-SDM-ICD 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Plasma Doping and Laser Spike Annealing Technique for Steep SDE Formation in nano-scale MOSFET 
Sub Title (in English)  
Keyword(1) MOSFET  
Keyword(2) Plasma Doping  
Keyword(3) Laser Spike Annealing  
Keyword(4) Halo doping  
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Keyword(6)  
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Keyword(8)  
1st Author's Name Emiko Sugizaki  
1st Author's Affiliation Toshiba Corporation (Toshiba)
2nd Author's Name Toshitaka Miyata  
2nd Author's Affiliation Toshiba Corporation (Toshiba)
3rd Author's Name Yasunori Oshima  
3rd Author's Affiliation Toshiba Corporation (Toshiba)
4th Author's Name Akira Hokazono  
4th Author's Affiliation Toshiba Corporation (Toshiba)
5th Author's Name Kanna Adachi  
5th Author's Affiliation Toshiba Corporation (Toshiba)
6th Author's Name Kiyotaka Miyano  
6th Author's Affiliation Toshiba Corporation (Toshiba)
7th Author's Name Hideji Tsujii  
7th Author's Affiliation Toshiba Corporation (Toshiba)
8th Author's Name Shigeru Kawanaka  
8th Author's Affiliation Toshiba Corporation (Toshiba)
9th Author's Name Satoshi Inaba  
9th Author's Affiliation Toshiba Corporation (Toshiba)
10th Author's Name Takaharu Itani  
10th Author's Affiliation Toshiba Corporation (Toshiba)
11th Author's Name Toshihiko Iinuma  
11th Author's Affiliation Toshiba Corporation (Toshiba)
12th Author's Name Yoshiaki Toyoshima  
12th Author's Affiliation Toshiba Corporation (Toshiba)
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Speaker Author-1 
Date Time 2011-08-25 10:50:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # SDM2011-75, ICD2011-43 
Volume (vol) vol.111 
Number (no) no.187(SDM), no.188(ICD) 
Page pp.23-27 
#Pages 5 
Date of Issue 2011-08-18 (SDM, ICD) 

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