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| Presentation | 2011-10-12 14:15 Improvement in electrical characteristics of NbN tunnel junctions with plasma-nitrided AlNx barriers Tatsunori Funai, Naoto Naito, Hiroyuki Akaike, Akira Fujimaki (Nagoya Univ.)  SCE2011-15 Link to ES Tech. Rep. Archives: SCE2011-15 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | We present the fabrication process of NbN tunnel junctions with plasma-nitrided AlNx barriers and the electrical characteristics of the junctions. The application of the junctions to high frequency electromagnetic wave detectors requires increase in the critical current density Jc and the gap voltage Vg of the junctions. In this work, we examined the conditions of depositing a counter NbN layer and forming an AlNx barrier for the purpose of improving the characteristics of the junctions. As a result, the Vg was increased by 0.4 mV to 5.0 mV by adjusting the deposition conditions and by raising the substrate temperature during deposition of the counter NbN layer. On the other hand, the Jc up to 10.2 kA/cm2 was obtained by changing the RF power density for nitriding an Al layer. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Plasma-Nitridation / AlNx / NbN / / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 111, no. 230, SCE2011-15, pp. 19-24, Oct. 2011. | |
| Paper # | SCE2011-15 | |
| Date of Issue | 2011-10-05 (SCE) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
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| Download PDF | SCE2011-15 Link to ES Tech. Rep. Archives: SCE2011-15 |
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| Conference Information | |
| Committee | SCE |
| Conference Date | 2011-10-12 - 2011-10-12 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Fundamental Technologies for Superconducting Electronics, etc. |
| Paper Information | |
| Registration To | SCE |
| Conference Code | 2011-10-SCE |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Improvement in electrical characteristics of NbN tunnel junctions with plasma-nitrided AlNx barriers |
| Sub Title (in English) | |
| Keyword(1) | Plasma-Nitridation |
| Keyword(2) | AlNx |
| Keyword(3) | NbN |
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| 1st Author's Name | Tatsunori Funai |
| 1st Author's Affiliation | Nagoya University (Nagoya Univ.) |
| 2nd Author's Name | Naoto Naito |
| 2nd Author's Affiliation | Nagoya University (Nagoya Univ.) |
| 3rd Author's Name | Hiroyuki Akaike |
| 3rd Author's Affiliation | Nagoya University (Nagoya Univ.) |
| 4th Author's Name | Akira Fujimaki |
| 4th Author's Affiliation | Nagoya University (Nagoya Univ.) |
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| Speaker | Author-1 |
| Date Time | 2011-10-12 14:15:00 |
| Presentation Time | 25 minutes |
| Registration for | SCE |
| Paper # | SCE2011-15 |
| Volume (vol) | vol.111 |
| Number (no) | no.230 |
| Page | pp.19-24 |
| #Pages | 6 |
| Date of Issue | 2011-10-05 (SCE) |
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