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Paper Abstract and Keywords
Presentation 2011-10-28 13:50
Insertion of Dumping Resistor to Reduce RF IC-Power-Current Peak Caused by Resonance due to Parasitic Impedance
Yusuke Yano, Kengo Iokibe, Yoshitaka Toyota (Okayama Univ.) EMCJ2011-84
Abstract (in Japanese) (See Japanese page) 
(in English) High-frequency current caused by simultaneous switching of digital gates which leaks toward the DC power supply into the power distribution network (PDN) increases when parasitic capacitance, cause a resonance with equivalent series inductances (ESL) of the decoupling capacitors and power-supply lines. The resonance of parasitic impedance cause a sharp peak of the RF power current.
In this report, we discussed possible locations of dumping resistor that decrease the current peak and derived optimal dumping resistances from the critical dumping condition of resonance.
To verify the effect of dumping resistor insertion, we calculated reductance of the RF power current by a circuit simulation.
Results showed that RF power current peak due to the parasitic impedance reduced with the dumping resistors parallel to the decoupling inductor or series to the parasitic capacitance.
The results of circuit simulation also showed that the insertion of dumping resistors make no deterioration in power integrity (PI).
Furthermore, the effects of dumping resistor insertion were demonstrated by using a printed circuit board on which a oscillation circuit composed of a general-purpose inverter IC and a crystal oscillator were mounted, measuring the RF power current and power bounce of the inverter IC.
Keyword (in Japanese) (See Japanese page) 
(in English) EMC / IC / Power Distribution Network / Parasitic Impedance / IC Power RF Current / Dumping Resistor / /  
Reference Info. IEICE Tech. Rep., vol. 111, no. 269, EMCJ2011-84, pp. 29-34, Oct. 2011.
Paper # EMCJ2011-84 
Date of Issue 2011-10-21 (EMCJ) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee EMCJ IEE-EMC  
Conference Date 2011-10-28 - 2011-10-28 
Place (in Japanese) (See Japanese page) 
Place (in English) Hachinohe Grand Hotel 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Discharge, EMC, etc. 
Paper Information
Registration To EMCJ 
Conference Code 2011-10-EMCJ-EMC 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Insertion of Dumping Resistor to Reduce RF IC-Power-Current Peak Caused by Resonance due to Parasitic Impedance 
Sub Title (in English)  
Keyword(1) EMC  
Keyword(2) IC  
Keyword(3) Power Distribution Network  
Keyword(4) Parasitic Impedance  
Keyword(5) IC Power RF Current  
Keyword(6) Dumping Resistor  
Keyword(7)  
Keyword(8)  
1st Author's Name Yusuke Yano  
1st Author's Affiliation Okayama University (Okayama Univ.)
2nd Author's Name Kengo Iokibe  
2nd Author's Affiliation Okayama University (Okayama Univ.)
3rd Author's Name Yoshitaka Toyota  
3rd Author's Affiliation Okayama University (Okayama Univ.)
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Speaker Author-1 
Date Time 2011-10-28 13:50:00 
Presentation Time 25 minutes 
Registration for EMCJ 
Paper # EMCJ2011-84 
Volume (vol) vol.111 
Number (no) no.269 
Page pp.29-34 
#Pages 6 
Date of Issue 2011-10-21 (EMCJ) 

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