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Paper Abstract and Keywords
Presentation 2011-11-17 13:45
Surface Barrier Height Lowering at Above 540 K in AlInN/AlN/GaN Heterostructures
Md. Tanvir Hasan, Hirokuni Tokuda, Masaaki Kuzuhara (Univ. of Fukui) ED2011-79 CPM2011-128 LQE2011-102
Abstract (in Japanese) (See Japanese page) 
(in English) This paper describes the temperature dependent two dimensional electron gas (2DEG) properties in AlInN/AlN/GaN heterostructures. Hall mobility (μH) and 2DEG density (ns) have been measured from 77 up to 973 K, where the atmospheric condition is changed as measured in vacuum and air. The μH decreases monotonically with increasing the temperature. It is found that the high temperature mobility is not only governed by the polar optical phonon scattering but also the acoustic phonon (deformation potential and piezoelectric) and interface roughness scatterings play a role. There was no significant difference observed in μH for changing the atmospheric condition. The characteristic feature is observed in ns that it is almost constant up to around 540 K, and shows sudden increase at higher temperatures when measured in the vacuum, while it is almost constant measured in the air. The surface barrier lowering originated from the decomposition of the surface oxide layer on AlInN is proposed as the most probable mechanism for the increase in ns.
Keyword (in Japanese) (See Japanese page) 
(in English) AlInN/GaN / heterostructure / 2DEG / Surface barrier height / / / /  
Reference Info. IEICE Tech. Rep., vol. 111, no. 290, ED2011-79, pp. 29-33, Nov. 2011.
Paper # ED2011-79 
Date of Issue 2011-11-10 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2011-79 CPM2011-128 LQE2011-102

Conference Information
Committee LQE ED CPM  
Conference Date 2011-11-17 - 2011-11-18 
Place (in Japanese) (See Japanese page) 
Place (in English) Katsura Hall，Kyoto Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ED 
Conference Code 2011-11-LQE-ED-CPM 
Language English (Japanese title is available) 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Surface Barrier Height Lowering at Above 540 K in AlInN/AlN/GaN Heterostructures 
Sub Title (in English)  
Keyword(1) AlInN/GaN  
Keyword(2) heterostructure  
Keyword(3) 2DEG  
Keyword(4) Surface barrier height  
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1st Author's Name Md. Tanvir Hasan  
1st Author's Affiliation University of Fukui (Univ. of Fukui)
2nd Author's Name Hirokuni Tokuda  
2nd Author's Affiliation University of Fukui (Univ. of Fukui)
3rd Author's Name Masaaki Kuzuhara  
3rd Author's Affiliation University of Fukui (Univ. of Fukui)
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Speaker Author-1 
Date Time 2011-11-17 13:45:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2011-79, CPM2011-128, LQE2011-102 
Volume (vol) vol.111 
Number (no) no.290(ED), no.291(CPM), no.292(LQE) 
Page pp.29-33 
#Pages 5 
Date of Issue 2011-11-10 (ED, CPM, LQE) 

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