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Paper Abstract and Keywords
Presentation 2011-11-17 10:05
AlN/GaN Short-Period Superlattice Coherently Grown on 6H-SiC (0001) Substrates by Molecular-Beam Epitaxy
Ryosuke Kikuchi, Hironori Okumura, Tsunenobu Kimoto, Jun Suda (Kyoto Univ.) ED2011-73 CPM2011-122 LQE2011-96
Abstract (in Japanese) (See Japanese page) 
(in English) Recently, we have successfully reduced the threading dislocation density in AlN layer on SiC substrates to 10$^8$ cm$^{-2}$ by controlling the step heights of the SiC substrates, Ga pre-deposition and avoiding unintentional active-nitrogen exposure prior to AlN growth. In this study, we report the growth of AlN/GaN short-period superlattice (SPSL) on SiC by applying the high-quality AlN growth process. We demonstrate coherent growth of AlN/GaN SPSL on SiC substrates. Thicknesses of AlN and GaN in the SPSL were 12 bilayer (BL) and 2 BL, respectively. The FWHM values of main peak for the AlN/GaN SPSL were 34.2 arcsec for the (0002) ω-scan and 37.9 arcsec for the (10$\bar{1}$2) ω-scan. A RSM near (1 1 $\bar{2}$ 12) reflection of 6H-SiC clearly indicates that AlN/GaN SPSL was coherently grown on 6H-SiC. The very small FHWM values reflect coherent growth of AlN/GaN SPSL on 6H-SiC substrate.
Keyword (in Japanese) (See Japanese page) 
(in English) AlN / GaN / Molecular-beam epitaxy / Short-period superlattice / Coherent growth / / /  
Reference Info. IEICE Tech. Rep., vol. 111, no. 290, ED2011-73, pp. 1-4, Nov. 2011.
Paper # ED2011-73 
Date of Issue 2011-11-10 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2011-73 CPM2011-122 LQE2011-96

Conference Information
Committee LQE ED CPM  
Conference Date 2011-11-17 - 2011-11-18 
Place (in Japanese) (See Japanese page) 
Place (in English) Katsura Hall，Kyoto Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ED 
Conference Code 2011-11-LQE-ED-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) AlN/GaN Short-Period Superlattice Coherently Grown on 6H-SiC (0001) Substrates by Molecular-Beam Epitaxy 
Sub Title (in English)  
Keyword(1) AlN  
Keyword(2) GaN  
Keyword(3) Molecular-beam epitaxy  
Keyword(4) Short-period superlattice  
Keyword(5) Coherent growth  
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Keyword(7)  
Keyword(8)  
1st Author's Name Ryosuke Kikuchi  
1st Author's Affiliation Kyoto University (Kyoto Univ.)
2nd Author's Name Hironori Okumura  
2nd Author's Affiliation Kyoto University (Kyoto Univ.)
3rd Author's Name Tsunenobu Kimoto  
3rd Author's Affiliation Kyoto University (Kyoto Univ.)
4th Author's Name Jun Suda  
4th Author's Affiliation Kyoto University (Kyoto Univ.)
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Speaker Author-1 
Date Time 2011-11-17 10:05:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2011-73, CPM2011-122, LQE2011-96 
Volume (vol) vol.111 
Number (no) no.290(ED), no.291(CPM), no.292(LQE) 
Page pp.1-4 
#Pages 4 
Date of Issue 2011-11-10 (ED, CPM, LQE) 

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