Paper Abstract and Keywords |
Presentation |
2011-11-18 14:15
Growth of (Si)(Ga)AlC(P) thin film on sapphire by metal organic chemical vapor deposition Yuya Ohnishi, Fumiya Horie, Shiro Sakai (Tokushimadai) ED2011-96 CPM2011-145 LQE2011-119 Link to ES Tech. Rep. Archives: ED2011-96 CPM2011-145 LQE2011-119 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Al4C3 film was grown by MOCVD by supplying TMA, CH4 on sapphire. Si and P were supplied to make it to dope to n-type. The P-inclusion makes CL to increase. The new GaC was grown to MOCVD by adding TMG to make a hetero-structure. The growth condition was summarized. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
AlC / Al4C3 / GaC / MOCVD / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 111, no. 292, LQE2011-119, pp. 117-120, Nov. 2011. |
Paper # |
LQE2011-119 |
Date of Issue |
2011-11-10 (ED, CPM, LQE) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2011-96 CPM2011-145 LQE2011-119 Link to ES Tech. Rep. Archives: ED2011-96 CPM2011-145 LQE2011-119 |
Conference Information |
Committee |
LQE ED CPM |
Conference Date |
2011-11-17 - 2011-11-18 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Katsura Hall,Kyoto Univ. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
|
Paper Information |
Registration To |
LQE |
Conference Code |
2011-11-LQE-ED-CPM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Growth of (Si)(Ga)AlC(P) thin film on sapphire by metal organic chemical vapor deposition |
Sub Title (in English) |
|
Keyword(1) |
AlC |
Keyword(2) |
Al4C3 |
Keyword(3) |
GaC |
Keyword(4) |
MOCVD |
Keyword(5) |
|
Keyword(6) |
|
Keyword(7) |
|
Keyword(8) |
|
1st Author's Name |
Yuya Ohnishi |
1st Author's Affiliation |
The University of Tokushima (Tokushimadai) |
2nd Author's Name |
Fumiya Horie |
2nd Author's Affiliation |
The University of Tokushima (Tokushimadai) |
3rd Author's Name |
Shiro Sakai |
3rd Author's Affiliation |
The University of Tokushima (Tokushimadai) |
4th Author's Name |
|
4th Author's Affiliation |
() |
5th Author's Name |
|
5th Author's Affiliation |
() |
6th Author's Name |
|
6th Author's Affiliation |
() |
7th Author's Name |
|
7th Author's Affiliation |
() |
8th Author's Name |
|
8th Author's Affiliation |
() |
9th Author's Name |
|
9th Author's Affiliation |
() |
10th Author's Name |
|
10th Author's Affiliation |
() |
11th Author's Name |
|
11th Author's Affiliation |
() |
12th Author's Name |
|
12th Author's Affiliation |
() |
13th Author's Name |
|
13th Author's Affiliation |
() |
14th Author's Name |
|
14th Author's Affiliation |
() |
15th Author's Name |
|
15th Author's Affiliation |
() |
16th Author's Name |
|
16th Author's Affiliation |
() |
17th Author's Name |
|
17th Author's Affiliation |
() |
18th Author's Name |
|
18th Author's Affiliation |
() |
19th Author's Name |
|
19th Author's Affiliation |
() |
20th Author's Name |
|
20th Author's Affiliation |
() |
Speaker |
Author-1 |
Date Time |
2011-11-18 14:15:00 |
Presentation Time |
25 minutes |
Registration for |
LQE |
Paper # |
ED2011-96, CPM2011-145, LQE2011-119 |
Volume (vol) |
vol.111 |
Number (no) |
no.290(ED), no.291(CPM), no.292(LQE) |
Page |
pp.117-120 |
#Pages |
4 |
Date of Issue |
2011-11-10 (ED, CPM, LQE) |
|