Information: Join today and make your research activities more affordable! Technical workshop participation fees and annual registration fees are available at member rates.
Notice: [Important] Announcement of Changes to Registration Fee Payment and Manuscript Upload Procedures for IEICE Technical Meetings
IEICE Technical Committee Submission System
Conference Paper's Information		 Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2011-12-15 13:00
[Invited Talk] Recent progress and future prospects of terahertz quantum cascade lasers
Hideki Hirayama, Wataru Terashima, Tsung-Tse Lin (RIKEN) ED2011-113
Abstract (in Japanese) (See Japanese page) 
(in English) Terahertz-quantum cascade lasers (THz-QCLs) are small-size, continuous-wave (cw) and long-lifetime THz light sources with high-efficiency, high-power, narrow line-width properties. For these reasons, there is strong demand for developing a practically applicable THz-QCL especially for the applications in non-destructive investigations. We are studying on GaAs and III-nitride-based THz-QCLs, for the purpose of achieving higher operating temperature (>230K) and unexplored frequency range (0.5-1THz and 5-12THz) on THz-QCLs. Recently, we achieved 3.7 THz lasing from GaAs/AlGaAs THz-QCL. We obtained maximum operating temperature (Tmax) of 143 K and minimum threshold current density (Jth) of 0.8 KA/cm2. We also observed Jth reductions of the GaAs/AlGaAs QCLs as increasing the Al-composition of AlGaAs barriers. We also developing THz-QCLs using III-nitride semiconductors, for the purpose of realizing 5-12 THz frequency range QCLs. We fabricated GaN/AlGaN QCL structures successfully by using a droplet elimination by thermal annealing (DETA) technique in MBE growth. We then achieved first spontaneous electroluminescence by intersubband transition in GaN-based THz-QCL structures, with peak frequencies from 1.4 to 2.8 THz.
Keyword (in Japanese) (See Japanese page) 
(in English) terahertz wave / quantum cascade laser / MBE crystal growth / intersubband transition / / / /  
Reference Info. IEICE Tech. Rep., vol. 111, no. 338, ED2011-113, pp. 75-78, Dec. 2011.
Paper # ED2011-113 
Date of Issue 2011-12-07 (ED) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2011-113

Conference Information
Committee ED  
Conference Date 2011-12-14 - 2011-12-15 
Place (in Japanese) (See Japanese page) 
Place (in English) Tohoku University 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Milimeter wave, terahertz device and systems 
Paper Information
Registration To ED 
Conference Code 2011-12-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Recent progress and future prospects of terahertz quantum cascade lasers 
Sub Title (in English)  
Keyword(1) terahertz wave  
Keyword(2) quantum cascade laser  
Keyword(3) MBE crystal growth  
Keyword(4) intersubband transition  
Keyword(5)  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Hideki Hirayama  
1st Author's Affiliation RIKEN (RIKEN)
2nd Author's Name Wataru Terashima  
2nd Author's Affiliation RIKEN (RIKEN)
3rd Author's Name Tsung-Tse Lin  
3rd Author's Affiliation RIKEN (RIKEN)
4th Author's Name  
4th Author's Affiliation ()
5th Author's Name  
5th Author's Affiliation ()
6th Author's Name  
6th Author's Affiliation ()
7th Author's Name  
7th Author's Affiliation ()
8th Author's Name  
8th Author's Affiliation ()
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
21st Author's Name  
21st Author's Affiliation ()
22nd Author's Name  
22nd Author's Affiliation ()
23rd Author's Name  
23rd Author's Affiliation ()
24th Author's Name  
24th Author's Affiliation ()
25th Author's Name  
25th Author's Affiliation ()
26th Author's Name / /
26th Author's Affiliation ()
()
27th Author's Name / /
27th Author's Affiliation ()
()
28th Author's Name / /
28th Author's Affiliation ()
()
29th Author's Name / /
29th Author's Affiliation ()
()
30th Author's Name / /
30th Author's Affiliation ()
()
31st Author's Name / /
31st Author's Affiliation ()
()
32nd Author's Name / /
32nd Author's Affiliation ()
()
33rd Author's Name / /
33rd Author's Affiliation ()
()
34th Author's Name / /
34th Author's Affiliation ()
()
35th Author's Name / /
35th Author's Affiliation ()
()
36th Author's Name / /
36th Author's Affiliation ()
()
Speaker Author-1 
Date Time 2011-12-15 13:00:00 
Presentation Time 40 minutes 
Registration for ED 
Paper # ED2011-113 
Volume (vol) vol.111 
Number (no) no.338 
Page pp.75-78 
#Pages 4 
Date of Issue 2011-12-07 (ED) 

[Return to Top Page]

[Return to IEICE Web Page]
The Institute of Electronics, Information and Communication Engineers (IEICE), Japan