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Paper Abstract and Keywords
Presentation 2011-12-16 16:00
Development of Low-Temperature Crystallization Method of Thin Film Semiconductor Using Soft X-ray Source
Akira Heya, Yuki Nonomura, Shota Kino, Naoto Matsuo (Univ. Hyogo), Sho Amano (LASTI Univ. Hyogo), Shuji Miyamoto, Kazuhiro Kanda, Takayasu Mochizuki (Univ. Hyogo), Kaoru Toko, Taizoh Sadoh, Masanobu Miyao (Kyushu Univ.) SDM2011-145
Abstract (in Japanese) (See Japanese page) 
(in English) It is necessary two processes (crystal-nucleus formation and crystal grain growth) for crystallization. In general, the activation energy of crystal-nucleus formation is higher than that of grain growth. To realize low-temperature crystallization, we tried to form the quasi-nucleus by soft X-ray irradiation. In this study, the effects of soft X-ray irradiation on crystallization of a-Si and a-Ge films were investigated. The crystallization temperatures of a-Si film and a-Ge film were decreased from 680 °C to 580 °C and 500 °C to 420 °C by soft X-ray irradiation, respectively. The decrease in crystallization temperature is also related to enhancement of atomic migration and atoms transitioning into a quasi-nuclei phase in the films.
Keyword (in Japanese) (See Japanese page) 
(in English) Soft X-ray source / Low-temperature crystallization / Polycrystalline silicon / Polycrystalline germanium / quesi-nucleus / / /  
Reference Info. IEICE Tech. Rep., vol. 111, no. 357, SDM2011-145, pp. 71-76, Dec. 2011.
Paper # SDM2011-145 
Date of Issue 2011-12-09 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2011-12-16 - 2011-12-16 
Place (in Japanese) (See Japanese page) 
Place (in English) NAIST 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Fabrication and Evaluation of Silicon related Materials 
Paper Information
Registration To SDM 
Conference Code 2011-12-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Development of Low-Temperature Crystallization Method of Thin Film Semiconductor Using Soft X-ray Source 
Sub Title (in English)  
Keyword(1) Soft X-ray source  
Keyword(2) Low-temperature crystallization  
Keyword(3) Polycrystalline silicon  
Keyword(4) Polycrystalline germanium  
Keyword(5) quesi-nucleus  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Akira Heya  
1st Author's Affiliation University of Hyogo (Univ. Hyogo)
2nd Author's Name Yuki Nonomura  
2nd Author's Affiliation University of Hyogo (Univ. Hyogo)
3rd Author's Name Shota Kino  
3rd Author's Affiliation University of Hyogo (Univ. Hyogo)
4th Author's Name Naoto Matsuo  
4th Author's Affiliation University of Hyogo (Univ. Hyogo)
5th Author's Name Sho Amano  
5th Author's Affiliation University of Hyogo (LASTI Univ. Hyogo)
6th Author's Name Shuji Miyamoto  
6th Author's Affiliation University of Hyogo (Univ. Hyogo)
7th Author's Name Kazuhiro Kanda  
7th Author's Affiliation University of Hyogo (Univ. Hyogo)
8th Author's Name Takayasu Mochizuki  
8th Author's Affiliation University of Hyogo (Univ. Hyogo)
9th Author's Name Kaoru Toko  
9th Author's Affiliation Kyushu University (Kyushu Univ.)
10th Author's Name Taizoh Sadoh  
10th Author's Affiliation Kyushu University (Kyushu Univ.)
11th Author's Name Masanobu Miyao  
11th Author's Affiliation Kyushu University (Kyushu Univ.)
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Speaker Author-1 
Date Time 2011-12-16 16:00:00 
Presentation Time 20 minutes 
Registration for SDM 
Paper # SDM2011-145 
Volume (vol) vol.111 
Number (no) no.357 
Page pp.71-76 
#Pages 6 
Date of Issue 2011-12-09 (SDM) 

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