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Paper Abstract and Keywords
Presentation 2011-12-16 10:00
Effect of High Pressure Water Vapor Annealing on the optical properties of ZnS-based inorganic EL phosphor
Takuya Kontani, Mao Taniguchi, Masahiro Horita (NAIST), Nobuyoshi Taguchi (Image Tech Inc.), Yasuaki Ishikawa, Yukiharu Uraoka (NAIST) SDM2011-132
Abstract (in Japanese) (See Japanese page) 
(in English) ZnS-based inorganic EL has been widely studied for next generation display and illumination. In the inorganic EL devices, which are generally fabricated by screen printing methods, improvement of the luminescence property of ZnS phosphor is important. Passivation of surface defects is one of the key issues to suppress the non-radiative recombination at the surface of phosphors. In this study, we investigate the effect of High Pressure water Vapor annealing (HPV) on ZnS phosphor. For the phosphor annealed in HPV ambience under the specific conditions, the PL intensity was enhanced and the luminance of EL devices also became large. On the other hand, the PL intensity and the luminance of EL devices were not improved for HPV samples annealed under another condition. The HPV annealing under the specific condition is effective in ZnS phosphor, and it is expected that HPV annealing under the optimum condition leads to the improvement of luminance of EL devices.
Keyword (in Japanese) (See Japanese page) 
(in English) ZnS / inorganic EL / high pressure water vapor annealing / atomization / infrared rapid thermal annealing / phosphor / /  
Reference Info. IEICE Tech. Rep., vol. 111, no. 357, SDM2011-132, pp. 1-5, Dec. 2011.
Paper # SDM2011-132 
Date of Issue 2011-12-09 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2011-12-16 - 2011-12-16 
Place (in Japanese) (See Japanese page) 
Place (in English) NAIST 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Fabrication and Evaluation of Silicon related Materials 
Paper Information
Registration To SDM 
Conference Code 2011-12-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Effect of High Pressure Water Vapor Annealing on the optical properties of ZnS-based inorganic EL phosphor 
Sub Title (in English)  
Keyword(1) ZnS  
Keyword(2) inorganic EL  
Keyword(3) high pressure water vapor annealing  
Keyword(4) atomization  
Keyword(5) infrared rapid thermal annealing  
Keyword(6) phosphor  
Keyword(7)  
Keyword(8)  
1st Author's Name Takuya Kontani  
1st Author's Affiliation Nara Institute of Science and Technology (NAIST)
2nd Author's Name Mao Taniguchi  
2nd Author's Affiliation Nara Institute of Science and Technology (NAIST)
3rd Author's Name Masahiro Horita  
3rd Author's Affiliation Nara Institute of Science and Technology (NAIST)
4th Author's Name Nobuyoshi Taguchi  
4th Author's Affiliation Image Tech Incorporated (Image Tech Inc.)
5th Author's Name Yasuaki Ishikawa  
5th Author's Affiliation Nara Institute of Science and Technology (NAIST)
6th Author's Name Yukiharu Uraoka  
6th Author's Affiliation Nara Institute of Science and Technology (NAIST)
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Speaker Author-1 
Date Time 2011-12-16 10:00:00 
Presentation Time 20 minutes 
Registration for SDM 
Paper # SDM2011-132 
Volume (vol) vol.111 
Number (no) no.357 
Page pp.1-5 
#Pages 5 
Date of Issue 2011-12-09 (SDM) 

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