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Paper Abstract and Keywords
Presentation 2012-01-12 15:35
Novel Field Plate Design for High-Power and High-Gain AlGaN/GaN HFETs on Si Substrates
Satoshi Nakazawa, Naohiro Tsurumi, Masaaki Nishijima, Yoshiharu Anda, Masahiro Ishida, Tetsuzo Ueda, Tsuyoshi Tanaka (Panasonic) ED2011-139 MW2011-162
Abstract (in Japanese) (See Japanese page) 
(in English) We demonstrate high power AlGaN/GaN HFETs on Si substrates with output power of 203W with the linear gain of 16.9dB operated at 2.5GHz. The devices have field plate structures of which design is based on the device parameters extracted from the small signal RF performance. Shortening the field plate length down to 0.6$\mu$m suppresses the change of the output impedance by the variation of the drain voltage keeping low feedback capacitance, which results in the high output power with high linear gain. The presented AlGaN/GaN HFETs are very promising for various microwave applications such as cellular base stations, which would lower the system cost taking advantage of cost-effective Si substrates.
Keyword (in Japanese) (See Japanese page) 
(in English) Field Effect Transistor / Field Plates / GaN / microwave power / / / /  
Reference Info. IEICE Tech. Rep., vol. 111, no. 373, ED2011-139, pp. 111-115, Jan. 2012.
Paper # ED2011-139 
Date of Issue 2012-01-04 (ED, MW) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2011-139 MW2011-162

Conference Information
Committee ED MW  
Conference Date 2012-01-11 - 2012-01-12 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ED 
Conference Code 2012-01-ED-MW 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Novel Field Plate Design for High-Power and High-Gain AlGaN/GaN HFETs on Si Substrates 
Sub Title (in English)  
Keyword(1) Field Effect Transistor  
Keyword(2) Field Plates  
Keyword(3) GaN  
Keyword(4) microwave power  
Keyword(5)  
Keyword(6)  
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Keyword(8)  
1st Author's Name Satoshi Nakazawa  
1st Author's Affiliation Panasonic Corporation (Panasonic)
2nd Author's Name Naohiro Tsurumi  
2nd Author's Affiliation Panasonic Corporation (Panasonic)
3rd Author's Name Masaaki Nishijima  
3rd Author's Affiliation Panasonic Corporation (Panasonic)
4th Author's Name Yoshiharu Anda  
4th Author's Affiliation Panasonic Corporation (Panasonic)
5th Author's Name Masahiro Ishida  
5th Author's Affiliation Panasonic Corporation (Panasonic)
6th Author's Name Tetsuzo Ueda  
6th Author's Affiliation Panasonic Corporation (Panasonic)
7th Author's Name Tsuyoshi Tanaka  
7th Author's Affiliation Panasonic Corporation (Panasonic)
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Speaker Author-1 
Date Time 2012-01-12 15:35:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2011-139, MW2011-162 
Volume (vol) vol.111 
Number (no) no.373(ED), no.374(MW) 
Page pp.111-115 
#Pages 5 
Date of Issue 2012-01-04 (ED, MW) 

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