Information: Join today and make your research activities more affordable! Technical workshop participation fees and annual registration fees are available at member rates.
Notice: [Important] Announcement of Changes to Registration Fee Payment and Manuscript Upload Procedures for IEICE Technical Meetings
IEICE Technical Committee Submission System
Conference Paper's Information		 Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2012-01-12 10:35
Low-Turn-on-Voltage Double Heterojunction Bipolar Transistors with a Narrow-Band-Gap InGaAsSb Base Grown by Metalorganic Chemical Vapor Deposition
Takuya Hoshi, Hiroki Sugiyama, Haruki Yokoyama, Kenji Kurishima, Minoru Ida (NTT) ED2011-130 MW2011-153
Abstract (in Japanese) (See Japanese page) 
(in English) Because of the significant increase of data traffic, there is now a strong demand for reducing the power consumptions of ICs for optical communications, such as transimpedance amplifiers. One of the best ways to reduce the power consumptions of ICs is to lower the operating voltage of transistors. InP-based heterojunction bipolar transistors (HBTs) with narrow-band-gap InGaAsSb base are possible candidates to accomplish that because they have favorable type-II band line-up. Previously, we managed to grow C-doped InGaAsSb films by metalorganic chemical vapor deposition (MOCVD). In this report, we demonstrate the low-turn-on-voltage HBTs with a C-doped InGaAsSb base grown by MOCVD as the next step. Both the near-band-edge emission peak energy in photoluminescence spectra of undoped InGaAsSb film and base-emitter the turn-on voltage of the HBT with an InGaAsSb base almost linearly decrease with increasing the solid In content of InGaAsSb. In the HBT with a In0.22Ga0.78As0.63Sb0.27 base, we obtain the turn-on voltage of 0.35 V at collector current density of 1 A/cm2 which is one of the lowest turn-on voltages ever reported.
Keyword (in Japanese) (See Japanese page) 
(in English) InGaAsSb / HBT / Low turn-on voltage / MOCVD / / / /  
Reference Info. IEICE Tech. Rep., vol. 111, no. 373, ED2011-130, pp. 63-68, Jan. 2012.
Paper # ED2011-130 
Date of Issue 2012-01-04 (ED, MW) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2011-130 MW2011-153

Conference Information
Committee ED MW  
Conference Date 2012-01-11 - 2012-01-12 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ED 
Conference Code 2012-01-ED-MW 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Low-Turn-on-Voltage Double Heterojunction Bipolar Transistors with a Narrow-Band-Gap InGaAsSb Base Grown by Metalorganic Chemical Vapor Deposition 
Sub Title (in English)  
Keyword(1) InGaAsSb  
Keyword(2) HBT  
Keyword(3) Low turn-on voltage  
Keyword(4) MOCVD  
Keyword(5)  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Takuya Hoshi  
1st Author's Affiliation NTT Corporation (NTT)
2nd Author's Name Hiroki Sugiyama  
2nd Author's Affiliation NTT Corporation (NTT)
3rd Author's Name Haruki Yokoyama  
3rd Author's Affiliation NTT Corporation (NTT)
4th Author's Name Kenji Kurishima  
4th Author's Affiliation NTT Corporation (NTT)
5th Author's Name Minoru Ida  
5th Author's Affiliation NTT Corporation (NTT)
6th Author's Name  
6th Author's Affiliation ()
7th Author's Name  
7th Author's Affiliation ()
8th Author's Name  
8th Author's Affiliation ()
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
21st Author's Name  
21st Author's Affiliation ()
22nd Author's Name  
22nd Author's Affiliation ()
23rd Author's Name  
23rd Author's Affiliation ()
24th Author's Name  
24th Author's Affiliation ()
25th Author's Name  
25th Author's Affiliation ()
26th Author's Name / /
26th Author's Affiliation ()
()
27th Author's Name / /
27th Author's Affiliation ()
()
28th Author's Name / /
28th Author's Affiliation ()
()
29th Author's Name / /
29th Author's Affiliation ()
()
30th Author's Name / /
30th Author's Affiliation ()
()
31st Author's Name / /
31st Author's Affiliation ()
()
32nd Author's Name / /
32nd Author's Affiliation ()
()
33rd Author's Name / /
33rd Author's Affiliation ()
()
34th Author's Name / /
34th Author's Affiliation ()
()
35th Author's Name / /
35th Author's Affiliation ()
()
36th Author's Name / /
36th Author's Affiliation ()
()
Speaker Author-1 
Date Time 2012-01-12 10:35:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2011-130, MW2011-153 
Volume (vol) vol.111 
Number (no) no.373(ED), no.374(MW) 
Page pp.63-68 
#Pages 6 
Date of Issue 2012-01-04 (ED, MW) 

[Return to Top Page]

[Return to IEICE Web Page]
The Institute of Electronics, Information and Communication Engineers (IEICE), Japan