Information: Join today and make your research activities more affordable! Technical workshop participation fees and annual registration fees are available at member rates.
Notice: [Important] Announcement of Changes to Registration Fee Payment and Manuscript Upload Procedures for IEICE Technical Meetings
IEICE Technical Committee Submission System
Conference Paper's Information		 Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2012-02-08 13:50
Characterization and Analysis of Low-Frequency Noise in SiN Insulator-Gate GaAs Etched Nanowire FETs
Toru Muramatsu, Seiya Kasai, Zenji Yatabe (Hokkaido Univ.) ED2011-157 SDM2011-174
Abstract (in Japanese) (See Japanese page) 
(in English) Low-frequency noise in SiN-gate GaAs-based nanowire field-effect transistors (FETs) is characterized and analyzed focusing on its device size dependence. Noise in a nanometer-scale semiconductor is an important issue, since it increases as the feature size is decreased. We observe the increased low-frequency noise in the nanowire current, which is caused by charging and discharging electron traps in the SiN gate insulator. As the nanowire width is decreased, the noise intensity increased and the spectral shape changes from 1/f to 1/f 2. Noise spectrum is analyzed by computing the spectrum for specific trap distribution functions in terms of time constant. We find the relationship between the spectral shape and the distribution function. Change of the observed spectral slope is understood in terms of the broadening of the trap distribution.
Keyword (in Japanese) (See Japanese page) 
(in English) nanowire FET / GaAs / Insulator gate / low frequency noise / time constant / distribution function / /  
Reference Info. IEICE Tech. Rep., vol. 111, no. 425, ED2011-157, pp. 89-93, Feb. 2012.
Paper # ED2011-157 
Date of Issue 2012-01-31 (ED, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2011-157 SDM2011-174

Conference Information
Committee ED SDM  
Conference Date 2012-02-07 - 2012-02-08 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ED 
Conference Code 2012-02-ED-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Characterization and Analysis of Low-Frequency Noise in SiN Insulator-Gate GaAs Etched Nanowire FETs 
Sub Title (in English)  
Keyword(1) nanowire FET  
Keyword(2) GaAs  
Keyword(3) Insulator gate  
Keyword(4) low frequency noise  
Keyword(5) time constant  
Keyword(6) distribution function  
Keyword(7)  
Keyword(8)  
1st Author's Name Toru Muramatsu  
1st Author's Affiliation Hokkaido University (Hokkaido Univ.)
2nd Author's Name Seiya Kasai  
2nd Author's Affiliation Hokkaido University (Hokkaido Univ.)
3rd Author's Name Zenji Yatabe  
3rd Author's Affiliation Hokkaido University (Hokkaido Univ.)
4th Author's Name  
4th Author's Affiliation ()
5th Author's Name  
5th Author's Affiliation ()
6th Author's Name  
6th Author's Affiliation ()
7th Author's Name  
7th Author's Affiliation ()
8th Author's Name  
8th Author's Affiliation ()
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
21st Author's Name  
21st Author's Affiliation ()
22nd Author's Name  
22nd Author's Affiliation ()
23rd Author's Name  
23rd Author's Affiliation ()
24th Author's Name  
24th Author's Affiliation ()
25th Author's Name  
25th Author's Affiliation ()
26th Author's Name / /
26th Author's Affiliation ()
()
27th Author's Name / /
27th Author's Affiliation ()
()
28th Author's Name / /
28th Author's Affiliation ()
()
29th Author's Name / /
29th Author's Affiliation ()
()
30th Author's Name / /
30th Author's Affiliation ()
()
31st Author's Name / /
31st Author's Affiliation ()
()
32nd Author's Name / /
32nd Author's Affiliation ()
()
33rd Author's Name / /
33rd Author's Affiliation ()
()
34th Author's Name / /
34th Author's Affiliation ()
()
35th Author's Name / /
35th Author's Affiliation ()
()
36th Author's Name / /
36th Author's Affiliation ()
()
Speaker Author-2 
Date Time 2012-02-08 13:50:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2011-157, SDM2011-174 
Volume (vol) vol.111 
Number (no) no.425(ED), no.426(SDM) 
Page pp.89-93 
#Pages 5 
Date of Issue 2012-01-31 (ED, SDM) 

[Return to Top Page]

[Return to IEICE Web Page]
The Institute of Electronics, Information and Communication Engineers (IEICE), Japan