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Paper Abstract and Keywords
Presentation 2012-03-01 09:20
[Special Talk] Small-Size FET Amplifier that Achieves Gain Flatness 0.08 dBpp over 200 MHz in 1 GHz Band
Sonshu Sakihara, Tuya Wuren, Hideyuki Uehara, Takashi Ohira (TUT) MW2011-166
Abstract (in Japanese) (See Japanese page) 
(in English) This paper presents small-size FET amplifier that achieves gain flatness 0.8 dBpp over 200 MHz in 1 GHz band. This circuit has simple configuration with a differential circuit connected to the gate of FET. This amplifier circuit is configured with only lumped-element. In order to prevent signal degradation and impedance mismatch from wiring, we have the interval of the circuit element very short. In a result, this amplifier circuit was fabricated in a small size of 1 cm square.
Keyword (in Japanese) (See Japanese page) 
(in English) amplifier / FET / gain flatness / / / / /  
Reference Info. IEICE Tech. Rep., vol. 111, no. 458, MW2011-166, pp. 5-7, March 2012.
Paper # MW2011-166 
Date of Issue 2012-02-23 (MW) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF MW2011-166

Conference Information
Committee MW  
Conference Date 2012-03-01 - 2012-03-02 
Place (in Japanese) (See Japanese page) 
Place (in English) Saga University 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Microwave Technologies 
Paper Information
Registration To MW 
Conference Code 2012-03-MW 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Small-Size FET Amplifier that Achieves Gain Flatness 0.08 dBpp over 200 MHz in 1 GHz Band 
Sub Title (in English)  
Keyword(1) amplifier  
Keyword(2) FET  
Keyword(3) gain flatness  
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1st Author's Name Sonshu Sakihara  
1st Author's Affiliation Toyohashi University of Technology (TUT)
2nd Author's Name Tuya Wuren  
2nd Author's Affiliation Toyohashi University of Technology (TUT)
3rd Author's Name Hideyuki Uehara  
3rd Author's Affiliation Toyohashi University of Technology (TUT)
4th Author's Name Takashi Ohira  
4th Author's Affiliation Toyohashi University of Technology (TUT)
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Speaker Author-1 
Date Time 2012-03-01 09:20:00 
Presentation Time 20 minutes 
Registration for MW 
Paper # MW2011-166 
Volume (vol) vol.111 
Number (no) no.458 
Page pp.5-7 
#Pages 3 
Date of Issue 2012-02-23 (MW) 

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