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| Presentation | 2012-03-01 13:45 How to improve efficiency of over 100W output power GaN High Power Amplifiers using Harmonic Termination Technique Koji Yamanaka, Norihiro Yunoue, Shin Chaki, Masatoshi Nakayama, Yoshihito Hirano (Mitsubishi Electric)  MW2011-175 Link to ES Tech. Rep. Archives: MW2011-175 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | In this paper, a high power and high efficiency fully internally-matched GaN FET operating at S-band is presented. Recently, many over 100W output power GaN HEMT amplifiers have been developed. Especially, much attention is paid for high efficiency GaN HEMT amplifiers, which will be used in mobile communication infrastructure systems. In this paper, optimal class of operation, which gives highest efficiency, for L-band and S-band respectively, is discussed under experimental results. By designing internal harmonic matching circuit, 330W output power and 62% power added efficiency was successfully obtained at S-band. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | GaN HEMT / High-voltage techniques / MODFET power amplifiers / / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 111, no. 458, MW2011-175, pp. 41-46, March 2012. | |
| Paper # | MW2011-175 | |
| Date of Issue | 2012-02-23 (MW) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | MW2011-175 Link to ES Tech. Rep. Archives: MW2011-175 |
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| Conference Information | |
| Committee | MW |
| Conference Date | 2012-03-01 - 2012-03-02 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Saga University |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Microwave Technologies |
| Paper Information | |
| Registration To | MW |
| Conference Code | 2012-03-MW |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | How to improve efficiency of over 100W output power GaN High Power Amplifiers using Harmonic Termination Technique |
| Sub Title (in English) | |
| Keyword(1) | GaN HEMT |
| Keyword(2) | High-voltage techniques |
| Keyword(3) | MODFET power amplifiers |
| Keyword(4) | |
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| 1st Author's Name | Koji Yamanaka |
| 1st Author's Affiliation | Mitsubishi Electric Corp. (Mitsubishi Electric) |
| 2nd Author's Name | Norihiro Yunoue |
| 2nd Author's Affiliation | Mitsubishi Electric Corp. (Mitsubishi Electric) |
| 3rd Author's Name | Shin Chaki |
| 3rd Author's Affiliation | Mitsubishi Electric Corp. (Mitsubishi Electric) |
| 4th Author's Name | Masatoshi Nakayama |
| 4th Author's Affiliation | Mitsubishi Electric Corp. (Mitsubishi Electric) |
| 5th Author's Name | Yoshihito Hirano |
| 5th Author's Affiliation | Mitsubishi Electric Corp. (Mitsubishi Electric) |
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| Speaker | Author-1 |
| Date Time | 2012-03-01 13:45:00 |
| Presentation Time | 30 minutes |
| Registration for | MW |
| Paper # | MW2011-175 |
| Volume (vol) | vol.111 |
| Number (no) | no.458 |
| Page | pp.41-46 |
| #Pages | 6 |
| Date of Issue | 2012-02-23 (MW) |
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