Paper Abstract and Keywords |
Presentation |
2012-06-21 13:35
Surface Segregation Behavior of B, Ga, Sb, and As Dopant Atoms on Ge(100) and Ge(111) Examined with a First-principles Method Fumiya Iijima, Kentaro Sawano (TCU), Jiro Ushio (CRL), Takuya Maruizumi, Yasuhiro Shiraki (TCU) SDM2012-52 Link to ES Tech. Rep. Archives: SDM2012-52 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
To understand surface segregation behaviour of B, Ga, As, and Sb dopant atoms on Ge (100) and Ge (111) surfaces, the potential energies of these dopant atoms in the five top layers of the surfaces were evaluated by first-principles molecular orbital calculations of model clusters. The obtained potential energy curves of these dopant atoms for Ge (100) closely resemble those for Si (100) surface. On the other hand, Ge (111) surface exhibits different potential profiles as compared with Ge (100) surface. The thermal activation energy between the adsorbed state and sub-surface state was also evaluated for each dopant atom. These energy data determining the driving force and dynamical property of dopant segregation help us to understand the difference in dopant surface segregation phenomena on Ge(100) and Ge(111) surfaces from an atomistic point of view. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Ge(100) / Ge(111) / surface segregation / first-principles method / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 112, no. 92, SDM2012-52, pp. 47-51, June 2012. |
Paper # |
SDM2012-52 |
Date of Issue |
2012-06-14 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
SDM2012-52 Link to ES Tech. Rep. Archives: SDM2012-52 |
Conference Information |
Committee |
SDM |
Conference Date |
2012-06-21 - 2012-06-21 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
VBL, Nagoya Univ. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Science and Technology for Dielectric Thin Films for Electron Devices |
Paper Information |
Registration To |
SDM |
Conference Code |
2012-06-SDM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Surface Segregation Behavior of B, Ga, Sb, and As Dopant Atoms on Ge(100) and Ge(111) Examined with a First-principles Method |
Sub Title (in English) |
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Keyword(1) |
Ge(100) |
Keyword(2) |
Ge(111) |
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surface segregation |
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first-principles method |
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1st Author's Name |
Fumiya Iijima |
1st Author's Affiliation |
Tokyo City University (TCU) |
2nd Author's Name |
Kentaro Sawano |
2nd Author's Affiliation |
Tokyo City University (TCU) |
3rd Author's Name |
Jiro Ushio |
3rd Author's Affiliation |
Hitachi Ltd. (CRL) |
4th Author's Name |
Takuya Maruizumi |
4th Author's Affiliation |
Tokyo City University (TCU) |
5th Author's Name |
Yasuhiro Shiraki |
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Tokyo City University (TCU) |
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Speaker |
Author-1 |
Date Time |
2012-06-21 13:35:00 |
Presentation Time |
20 minutes |
Registration for |
SDM |
Paper # |
SDM2012-52 |
Volume (vol) |
vol.112 |
Number (no) |
no.92 |
Page |
pp.47-51 |
#Pages |
5 |
Date of Issue |
2012-06-14 (SDM) |
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