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| Presentation | 2012-07-26 15:25 Effect of ICP Etching on p-type GaN Schottky Contacts Toshifumi Takahashi (Univ. of Fukui), Naoki Kaneda, Tomoyoshi Mishima (Hitachi Cable), Kazuki Nomoto (Univ. of Notre Dame), Kenji Shiojima (Univ. of Fukui)  ED2012-45 Link to ES Tech. Rep. Archives: ED2012-45 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Low-Mg-doped p-GaN Schottky contacts were applied to evaluate inductive coupled plasma (ICP) etching damages. The ICP etching greatly affected reducing the memory effect in the current-voltage characteristics and difference between the depletion layer capacitances before and after forward current injection. These reductions indicate that the acceptor-type interfacial defects were passivated by H atoms and/or compensated by donor-type defects formed during the ICP etching. Additionally, photoresponse measurements revealed that the etching increased qφB from 2.08 to 2.63 eV. Due to the change of the surface states, the Fermi level position would move to the conduction band edge slightly by the etching. By the annealing, this effect was partially removed, and then the capacitance difference increased and the PR spectrum showed less variation. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | ICP etching / p-GaN / Schottky contacts / memory effect / acceptor type defects / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 112, no. 154, ED2012-45, pp. 21-24, July 2012. | |
| Paper # | ED2012-45 | |
| Date of Issue | 2012-07-19 (ED) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2012-45 Link to ES Tech. Rep. Archives: ED2012-45 |
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| Conference Information | |
| Committee | ED |
| Conference Date | 2012-07-26 - 2012-07-27 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Fukui University |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Semiconductor Process and Devices (surface, interface, reliability), others |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2012-07-ED |
| Language | English (Japanese title is available) |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Effect of ICP Etching on p-type GaN Schottky Contacts |
| Sub Title (in English) | |
| Keyword(1) | ICP etching |
| Keyword(2) | p-GaN |
| Keyword(3) | Schottky contacts |
| Keyword(4) | memory effect |
| Keyword(5) | acceptor type defects |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Toshifumi Takahashi |
| 1st Author's Affiliation | University of Fukui (Univ. of Fukui) |
| 2nd Author's Name | Naoki Kaneda |
| 2nd Author's Affiliation | Hitachi Cable Ltd. (Hitachi Cable) |
| 3rd Author's Name | Tomoyoshi Mishima |
| 3rd Author's Affiliation | Hitachi Cable Ltd. (Hitachi Cable) |
| 4th Author's Name | Kazuki Nomoto |
| 4th Author's Affiliation | University of Notre Dame (Univ. of Notre Dame) |
| 5th Author's Name | Kenji Shiojima |
| 5th Author's Affiliation | University of Fukui (Univ. of Fukui) |
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| Speaker | Author-1 |
| Date Time | 2012-07-26 15:25:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2012-45 |
| Volume (vol) | vol.112 |
| Number (no) | no.154 |
| Page | pp.21-24 |
| #Pages | 4 |
| Date of Issue | 2012-07-19 (ED) |
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