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Paper Abstract and Keywords
Presentation 2012-07-27 11:50
Graphene FET with Diamondlike Carbon Dielectrics
Susumu Takabayashi, Meng Yang, Shuichi Ogawa, Hiroyuki Hayashi, Yuki Kurita, Yuji Takakuwa, Tetsuya Suemitsu, Taiichi Otsuji (Tohoku Univ.) ED2012-53
Abstract (in Japanese) (See Japanese page) 
(in English) A graphene-channel field effect transistor with a diamondlike carbon (DLC) top-gate dielectric film is presented (DLC-GFET). The DLC film was formed ‘directly’ onto the graphene channel without forming passivation interlayers using original our photoemission-assisted plasma-enhanced chemical vapor deposition (PA-CVD), where the plasma was precisely controlled by photoemission from the sample with quite low electric power, minimizing plasma damage to the graphene. The DLC-GFET exhibits clear ambipolar characteristics with a slightly positive shift of the neutral point (Dirac voltage). Relatively high transconductances were obtained as 14.6 (8.8) mS/mm in the n (p) channel modes, respectively, with a thick DLC gate dielectric of 48 nm and a long gate length of 5 μm, promising vertical scaling-down to exhibit an excellent radio-frequency performance. The positive shift of the Dirac voltage is due to unintentional hole doping from an oxygen species like water adsorbed at the DLC/graphene interface. Based on the results, the authors propose a modulation-doped DLC/graphene structure with δ-doped impurity atoms/molecules.
Keyword (in Japanese) (See Japanese page) 
(in English) graphene / diamondlike carbon (DLC) / field effect transistor (FET) / photoemission-assisted plasma-enhanced chemical vapor deposition (PA-CVD) / / / /  
Reference Info. IEICE Tech. Rep., vol. 112, no. 154, ED2012-53, pp. 67-72, July 2012.
Paper # ED2012-53 
Date of Issue 2012-07-19 (ED) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee ED  
Conference Date 2012-07-26 - 2012-07-27 
Place (in Japanese) (See Japanese page) 
Place (in English) Fukui University 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Semiconductor Process and Devices (surface, interface, reliability), others 
Paper Information
Registration To ED 
Conference Code 2012-07-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Graphene FET with Diamondlike Carbon Dielectrics 
Sub Title (in English)  
Keyword(1) graphene  
Keyword(2) diamondlike carbon (DLC)  
Keyword(3) field effect transistor (FET)  
Keyword(4) photoemission-assisted plasma-enhanced chemical vapor deposition (PA-CVD)  
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Keyword(6)  
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1st Author's Name Susumu Takabayashi  
1st Author's Affiliation Tohoku University (Tohoku Univ.)
2nd Author's Name Meng Yang  
2nd Author's Affiliation Tohoku University (Tohoku Univ.)
3rd Author's Name Shuichi Ogawa  
3rd Author's Affiliation Tohoku University (Tohoku Univ.)
4th Author's Name Hiroyuki Hayashi  
4th Author's Affiliation Tohoku University (Tohoku Univ.)
5th Author's Name Yuki Kurita  
5th Author's Affiliation Tohoku University (Tohoku Univ.)
6th Author's Name Yuji Takakuwa  
6th Author's Affiliation Tohoku University (Tohoku Univ.)
7th Author's Name Tetsuya Suemitsu  
7th Author's Affiliation Tohoku University (Tohoku Univ.)
8th Author's Name Taiichi Otsuji  
8th Author's Affiliation Tohoku University (Tohoku Univ.)
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Speaker Author-1 
Date Time 2012-07-27 11:50:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2012-53 
Volume (vol) vol.112 
Number (no) no.154 
Page pp.67-72 
#Pages 6 
Date of Issue 2012-07-19 (ED) 

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