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Paper Abstract and Keywords
Presentation 2012-10-26 11:20
Improvement of breakdown voltage for Self-biased Channel Diode by deep boron ion implantation
Tsugutomo Kudoh (Kanagawa Int. of Tech.), Fumihiko Sugawara, Kouichi Ohnuma (Tohoku-Gakuin Univ.) EMCJ2012-79 EST2012-63
Abstract (in Japanese) (See Japanese page) 
(in English) We have previously proposed a DMOS self-biased channel diode incorporating a self-bias effect in a channel diode with three-terminal operation. The proposed diode exhibits good characteristics with low loss and resistance to thermal runaway. However, since it does not have a body-shorted structure, an improved breakdown voltage is deemed necessary. In the present study, we investigated the effects of additional impurity profiling by self-aligned deep implantation of boron ions with a peak density of 7×10^19/cm^3 in the double-diffusion impurity region on the anode side of the device. In 3D device simulations, this was shown to provide a breakdown voltage of -27.2(V), an improvement of approximately 13(V) from the value of -14.7(V) obtained with the ordinary double-diffusion structure, without adversely affecting the forward characteristics.
Keyword (in Japanese) (See Japanese page) 
(in English) DMOS-type / Self-biased channel diode / deep Boron ion implantation / improvement of breakdown voltage / 3D-shimulation / / /  
Reference Info. IEICE Tech. Rep., vol. 112, no. 257, EST2012-63, pp. 93-97, Oct. 2012.
Paper # EST2012-63 
Date of Issue 2012-10-18 (EMCJ, EST) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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Conference Information
Committee EST EMCJ IEE-EMC  
Conference Date 2012-10-25 - 2012-10-26 
Place (in Japanese) (See Japanese page) 
Place (in English) Tohoku Gakuin University(Tagajo Campus) 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Simulation technology, EMC, etc. 
Paper Information
Registration To EST 
Conference Code 2012-10-EST-EMCJ-EMC 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Improvement of breakdown voltage for Self-biased Channel Diode by deep boron ion implantation 
Sub Title (in English)  
Keyword(1) DMOS-type  
Keyword(2) Self-biased channel diode  
Keyword(3) deep Boron ion implantation  
Keyword(4) improvement of breakdown voltage  
Keyword(5) 3D-shimulation  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Tsugutomo Kudoh  
1st Author's Affiliation Kanagawa Institute of Technology (Kanagawa Int. of Tech.)
2nd Author's Name Fumihiko Sugawara  
2nd Author's Affiliation Tohoku-Gakuin University (Tohoku-Gakuin Univ.)
3rd Author's Name Kouichi Ohnuma  
3rd Author's Affiliation Tohoku-Gakuin University (Tohoku-Gakuin Univ.)
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Speaker Author-1 
Date Time 2012-10-26 11:20:00 
Presentation Time 25 minutes 
Registration for EST 
Paper # EMCJ2012-79, EST2012-63 
Volume (vol) vol.112 
Number (no) no.256(EMCJ), no.257(EST) 
Page pp.93-97 
#Pages 5 
Date of Issue 2012-10-18 (EMCJ, EST) 

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