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Paper Abstract and Keywords
Presentation 2012-11-30 14:55
The Effect of Carrier Transport and Thermal Activation Processes on Non-radiative Carrier Recombination Processes in InN Films
Daichi Imai, Yoshihiro Ishitani (Chiba Univ.), Xinqiang Wang (Peking Univ.), Kazuhide Kusakabe, Akihiko Yoshikawa (Chiba Univ. SMART) ED2012-87 CPM2012-144 LQE2012-115
Abstract (in Japanese) (See Japanese page) 
(in English) Carrier transition processes via deep states leading to the reduction of the band edge radiative recombination efficiency have been analyzed by infrared (IR) spectroscopic measurements. We focus on the thermally activated non-radiative recombination (NR), radiative transition via deep states, and carrier transportation processes by NR defects. Although we have found the radiative recombination via deep states, the dominant carrier recombination processes is NR by phonon emission processes. Candidate defects of the NR centers are accepter nature. The difference in the PL intensity between n and p-type samples are caused by the difference in the minority carrier diffusion length and effective NR activation energy in the configuration coordinate diagram. NR rate in InN is highly affected by the carrier transportation and thermal activation processes.
Keyword (in Japanese) (See Japanese page) 
(in English) InN / Non-radiative recombination / Deep state / Activation energy / Carrier transport process / / /  
Reference Info. IEICE Tech. Rep., vol. 112, no. 329, LQE2012-115, pp. 103-108, Nov. 2012.
Paper # LQE2012-115 
Date of Issue 2012-11-22 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2012-87 CPM2012-144 LQE2012-115

Conference Information
Committee ED LQE CPM  
Conference Date 2012-11-29 - 2012-11-30 
Place (in Japanese) (See Japanese page) 
Place (in English) Osaka City University 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Ｎｉｔｒide and Compound Semiconductor Devices 
Paper Information
Registration To LQE 
Conference Code 2012-11-ED-LQE-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) The Effect of Carrier Transport and Thermal Activation Processes on Non-radiative Carrier Recombination Processes in InN Films 
Sub Title (in English)  
Keyword(1) InN  
Keyword(2) Non-radiative recombination  
Keyword(3) Deep state  
Keyword(4) Activation energy  
Keyword(5) Carrier transport process  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Daichi Imai  
1st Author's Affiliation Chiba University (Chiba Univ.)
2nd Author's Name Yoshihiro Ishitani  
2nd Author's Affiliation Graduate school of Electric and Electronic Engineering, Chiba University (Chiba Univ.)
3rd Author's Name Xinqiang Wang  
3rd Author's Affiliation School of Physics, Peking University (Peking Univ.)
4th Author's Name Kazuhide Kusakabe  
4th Author's Affiliation Center for SMART Green Innovation Research (Chiba Univ. SMART)
5th Author's Name Akihiko Yoshikawa  
5th Author's Affiliation Center for SMART Green Innovation Research (Chiba Univ. SMART)
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Speaker Author-1 
Date Time 2012-11-30 14:55:00 
Presentation Time 25 minutes 
Registration for LQE 
Paper # ED2012-87, CPM2012-144, LQE2012-115 
Volume (vol) vol.112 
Number (no) no.327(ED), no.328(CPM), no.329(LQE) 
Page pp.103-108 
#Pages 6 
Date of Issue 2012-11-22 (ED, CPM, LQE) 

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