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Paper Abstract and Keywords
Presentation 2012-12-05 16:20
FRET Based pH-Sensor by Using InP/ZnS Quantum Dot Phosphor
Takeshi Fukuda, Nayuta Funaki, Tomokazu Kurabayashi, Shinnosuke Akiyama, Miho Suzuki (Saitama Univ.) OME2012-81
Abstract (in Japanese) (See Japanese page) 
(in English) Since photoluminescence (PL) intensity of several kinds of organic molecules changes by changing pH, fluorescent resonance energy transfer (FRET)-type pH sensors with semiconductor quantum dots (QDs) have been required for next generation diagnostic drugs. Especially, the aforementioned types of QDs consist of highly toxic ions, which may cause several environmental problems in the near future. Therefore, the use of InP QDs has been investigated; the bandgap of bulk InP is 1.347 eV at 300 K, corresponding to an emission band in the near-infrared region. Therefore, the shorter-shifted emission wavelength is suitable for the visible emission band of InP QDs. We investigated the feasibility of ZnS coating by the solvothermal process, which requires high-pressure annealing. By optimizing the pH of solution, we achieved the maximum photoluminescence (PL) quantum yield of 25.1% for red-emitting InP/ZnS QDs. In addition, the FRET was observed by adding 5-(and-6)-carboxynaphthofluorescein, succinimidyl ester in the InP/ZnS solution. The relative PL intensity of organic molecule against InP was changed by changing pH, which indicates that the fabricated material acts as the pH sensor.
Keyword (in Japanese) (See Japanese page) 
(in English) Semiconductor nano phosphor / InP/ZnS / Fluorescence resonance energy transfer / pH sensor / / / /  
Reference Info. IEICE Tech. Rep., vol. 112, no. 333, OME2012-81, pp. 29-32, Dec. 2012.
Paper # OME2012-81 
Date of Issue 2012-11-28 (OME) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee OME  
Conference Date 2012-12-05 - 2012-12-05 
Place (in Japanese) (See Japanese page) 
Place (in English) Okinawa-seinen-kaikan 
Topics (in Japanese) (See Japanese page) 
Topics (in English) baiotechnology, solid/liquid interface, materials. electron transfer reaction, etc. 
Paper Information
Registration To OME 
Conference Code 2012-12-OME 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) FRET Based pH-Sensor by Using InP/ZnS Quantum Dot Phosphor 
Sub Title (in English)  
Keyword(1) Semiconductor nano phosphor  
Keyword(2) InP/ZnS  
Keyword(3) Fluorescence resonance energy transfer  
Keyword(4) pH sensor  
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1st Author's Name Takeshi Fukuda  
1st Author's Affiliation Saitama University (Saitama Univ.)
2nd Author's Name Nayuta Funaki  
2nd Author's Affiliation Saitama University (Saitama Univ.)
3rd Author's Name Tomokazu Kurabayashi  
3rd Author's Affiliation Saitama University (Saitama Univ.)
4th Author's Name Shinnosuke Akiyama  
4th Author's Affiliation Saitama University (Saitama Univ.)
5th Author's Name Miho Suzuki  
5th Author's Affiliation Saitama University (Saitama Univ.)
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Speaker Author-1 
Date Time 2012-12-05 16:20:00 
Presentation Time 25 minutes 
Registration for OME 
Paper # OME2012-81 
Volume (vol) vol.112 
Number (no) no.333 
Page pp.29-32 
#Pages 4 
Date of Issue 2012-11-28 (OME) 

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