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Paper Abstract and Keywords
Presentation 2012-12-07 14:00
Depth analysis of ultra-shallow junctions by photoluminescence with the aid of nano-scale wet etching
Gota Murai, Masashi Okutani, Syuji Tagawa, Masahiro Yoshimoto (Kyoto Inst. Tech.), Woo Sik Yoo (WaferMasters) SDM2012-127
Abstract (in Japanese) (See Japanese page) 
(in English) The photoluminescence (PL) intensity at room temperature increased with decreasing defect density measured by DLTS(deep level transient spectroscopy). The contribution of nonradiative recombination in the ultra-shallow implanted layer was evaluated by removing the implanted layer. It is concluded that the intensity change by the annealing is mainly ascribed to the defects in the depletion layer of the pn junction, i.e. the region beneath the implanted layer. The defects detected by DLTS in the depletion layer work as a parallel resistance, and cause the leakage current under the open circuit condition during the PL measurement. Consequently, the PL intensity emitted from the region beneath the depletion layer decreases with increasing density of defects in the depletion layer. PL measurements enable us to monitor defect generation and annihilation, which has been characterized by monitoring electrical properties, including rectifying characteristics and DLTS of ultra-shallow junction.
Keyword (in Japanese) (See Japanese page) 
(in English) ultra-shallow junction / ion implantation / nanoscale wet etching / photoluminescence / DLTS / / /  
Reference Info. IEICE Tech. Rep., vol. 112, no. 337, SDM2012-127, pp. 71-76, Dec. 2012.
Paper # SDM2012-127 
Date of Issue 2012-11-30 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2012-12-07 - 2012-12-07 
Place (in Japanese) (See Japanese page) 
Place (in English) Kyoto Univ. (Katsura) 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Fabrication and Characterization of Si-related Materials and Devices 
Paper Information
Registration To SDM 
Conference Code 2012-12-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Depth analysis of ultra-shallow junctions by photoluminescence with the aid of nano-scale wet etching 
Sub Title (in English)  
Keyword(1) ultra-shallow junction  
Keyword(2) ion implantation  
Keyword(3) nanoscale wet etching  
Keyword(4) photoluminescence  
Keyword(5) DLTS  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Gota Murai  
1st Author's Affiliation Kyoto Institute of Technology (Kyoto Inst. Tech.)
2nd Author's Name Masashi Okutani  
2nd Author's Affiliation Kyoto Institute of Technology (Kyoto Inst. Tech.)
3rd Author's Name Syuji Tagawa  
3rd Author's Affiliation Kyoto Institute of Technology (Kyoto Inst. Tech.)
4th Author's Name Masahiro Yoshimoto  
4th Author's Affiliation Kyoto Institute of Technology (Kyoto Inst. Tech.)
5th Author's Name Woo Sik Yoo  
5th Author's Affiliation WaferMasters,Inc (WaferMasters)
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Speaker Author-1 
Date Time 2012-12-07 14:00:00 
Presentation Time 15 minutes 
Registration for SDM 
Paper # SDM2012-127 
Volume (vol) vol.112 
Number (no) no.337 
Page pp.71-76 
#Pages 6 
Date of Issue 2012-11-30 (SDM) 

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