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Paper Abstract and Keywords
Presentation 2012-12-07 15:45
Electric Characteristic of Crystalline Silicon Solar Cells using Electroluminescence Imaging under Reverse-based
Emi Sugimura, Shigekazu Shimazaki, Ayumi Tani, Takashi Fuyuki (NAIST) SDM2012-133
Abstract (in Japanese) (See Japanese page) 
(in English) The electroluminescence (EL) imaging has received spatially resolved information about the electronic material properties of silicon solar cells. The EL mechanism is different in EL under forward bias and reverse bias. EL under forward bias is proportional to total excess minority carrier density and deficiencies, such as cracks and defects, reduce minority carrier density, eventually this phenomenon induces spatial variations or in homogeneities as dark parts on EL images. In contrast, the EL under reverse bias is induced by high electric field mainly located in the depletion layer. The electrically active defects can be detected as hot spots, which are tightly related with harmful current shunt path.
In this study, we have investigated impact of solar cell characteristics depend on the presence or absence of EL under reverse bias. The experimental sample was fabricated divided into a small area using photolithography. As a result, the presence of the EL device is reduced diode characteristic. From this, we will discuss characteristics and local electrical due to the presence of EL, the impact on the characteristics of the whole device.
Keyword (in Japanese) (See Japanese page) 
(in English) Crystalline Si solar cell / Reverse bias / Electroluminescence / Shunt / / / /  
Reference Info. IEICE Tech. Rep., vol. 112, no. 337, SDM2012-133, pp. 107-111, Dec. 2012.
Paper # SDM2012-133 
Date of Issue 2012-11-30 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2012-12-07 - 2012-12-07 
Place (in Japanese) (See Japanese page) 
Place (in English) Kyoto Univ. (Katsura) 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Fabrication and Characterization of Si-related Materials and Devices 
Paper Information
Registration To SDM 
Conference Code 2012-12-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Electric Characteristic of Crystalline Silicon Solar Cells using Electroluminescence Imaging under Reverse-based 
Sub Title (in English)  
Keyword(1) Crystalline Si solar cell  
Keyword(2) Reverse bias  
Keyword(3) Electroluminescence  
Keyword(4) Shunt  
Keyword(5)  
Keyword(6)  
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1st Author's Name Emi Sugimura  
1st Author's Affiliation Nara Institute of Science and Technology (NAIST)
2nd Author's Name Shigekazu Shimazaki  
2nd Author's Affiliation Nara Institute of Science and Technology (NAIST)
3rd Author's Name Ayumi Tani  
3rd Author's Affiliation Nara Institute of Science and Technology (NAIST)
4th Author's Name Takashi Fuyuki  
4th Author's Affiliation Nara Institute of Science and Technology (NAIST)
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Speaker Author-1 
Date Time 2012-12-07 15:45:00 
Presentation Time 15 minutes 
Registration for SDM 
Paper # SDM2012-133 
Volume (vol) vol.112 
Number (no) no.337 
Page pp.107-111 
#Pages 5 
Date of Issue 2012-11-30 (SDM) 

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