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Paper Abstract and Keywords
Presentation 2012-12-07 15:15
Optimization of a crystalline silicon solar cell which has the high concentration impurities layer under an electrode formed by continuous wave laser.
Shingo Yumoto, Hideki Nishimura, Kenji Hirata, Emi Sugimura, Takashi Fuyuki (NAIST) SDM2012-131 Link to ES Tech. Rep. Archives: SDM2012-131
Abstract (in Japanese) (See Japanese page) 
(in English) Laser doping (LD) is a new process to produce a low-cost, high efficient crystalline silicon solar cells. Since LD can produce a solar cell in the room temperature, and it is possible to form an emitter layer selectively, efficient structures, such as selective emitter structure, can be made easily. In the selective emitter structure formed of LD, such as the width of an electrode, alignment of an electrode, the depth of an emitter layer and concentration, are important parameters, and those optimization is needed. Optimization of the emitter layer by laser output conditions has so far been performed1). However, examination of the selective emitter structure width of an electrode to electrode width is not performed. In this research, the high concentration impurities layer formed by LD was optimized.
Keyword (in Japanese) (See Japanese page) 
(in English) crystalline silicon solar cell / laser doping / selective emitter / / / / /  
Reference Info. IEICE Tech. Rep., vol. 112, no. 337, SDM2012-131, pp. 95-99, Dec. 2012.
Paper # SDM2012-131 
Date of Issue 2012-11-30 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2012-131 Link to ES Tech. Rep. Archives: SDM2012-131

Conference Information
Committee SDM  
Conference Date 2012-12-07 - 2012-12-07 
Place (in Japanese) (See Japanese page) 
Place (in English) Kyoto Univ. (Katsura) 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Fabrication and Characterization of Si-related Materials and Devices 
Paper Information
Registration To SDM 
Conference Code 2012-12-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Optimization of a crystalline silicon solar cell which has the high concentration impurities layer under an electrode formed by continuous wave laser. 
Sub Title (in English)  
Keyword(1) crystalline silicon solar cell  
Keyword(2) laser doping  
Keyword(3) selective emitter  
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1st Author's Name Shingo Yumoto  
1st Author's Affiliation Nara Institute of Science and Technology (NAIST)
2nd Author's Name Hideki Nishimura  
2nd Author's Affiliation Nara Institute of Science and Technology (NAIST)
3rd Author's Name Kenji Hirata  
3rd Author's Affiliation Nara Institute of Science and Technology (NAIST)
4th Author's Name Emi Sugimura  
4th Author's Affiliation Nara Institute of Science and Technology (NAIST)
5th Author's Name Takashi Fuyuki  
5th Author's Affiliation Nara Institute of Science and Technology (NAIST)
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Speaker Author-1 
Date Time 2012-12-07 15:15:00 
Presentation Time 15 minutes 
Registration for SDM 
Paper # SDM2012-131 
Volume (vol) vol.112 
Number (no) no.337 
Page pp.95-99 
#Pages
Date of Issue 2012-11-30 (SDM) 


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