Paper Abstract and Keywords |
Presentation |
2012-12-07 15:15
Optimization of a crystalline silicon solar cell which has the high concentration impurities layer under an electrode formed by continuous wave laser. Shingo Yumoto, Hideki Nishimura, Kenji Hirata, Emi Sugimura, Takashi Fuyuki (NAIST) SDM2012-131 Link to ES Tech. Rep. Archives: SDM2012-131 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Laser doping (LD) is a new process to produce a low-cost, high efficient crystalline silicon solar cells. Since LD can produce a solar cell in the room temperature, and it is possible to form an emitter layer selectively, efficient structures, such as selective emitter structure, can be made easily. In the selective emitter structure formed of LD, such as the width of an electrode, alignment of an electrode, the depth of an emitter layer and concentration, are important parameters, and those optimization is needed. Optimization of the emitter layer by laser output conditions has so far been performed1). However, examination of the selective emitter structure width of an electrode to electrode width is not performed. In this research, the high concentration impurities layer formed by LD was optimized. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
crystalline silicon solar cell / laser doping / selective emitter / / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 112, no. 337, SDM2012-131, pp. 95-99, Dec. 2012. |
Paper # |
SDM2012-131 |
Date of Issue |
2012-11-30 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
SDM2012-131 Link to ES Tech. Rep. Archives: SDM2012-131 |
Conference Information |
Committee |
SDM |
Conference Date |
2012-12-07 - 2012-12-07 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Kyoto Univ. (Katsura) |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Fabrication and Characterization of Si-related Materials and Devices |
Paper Information |
Registration To |
SDM |
Conference Code |
2012-12-SDM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Optimization of a crystalline silicon solar cell which has the high concentration impurities layer under an electrode formed by continuous wave laser. |
Sub Title (in English) |
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Keyword(1) |
crystalline silicon solar cell |
Keyword(2) |
laser doping |
Keyword(3) |
selective emitter |
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1st Author's Name |
Shingo Yumoto |
1st Author's Affiliation |
Nara Institute of Science and Technology (NAIST) |
2nd Author's Name |
Hideki Nishimura |
2nd Author's Affiliation |
Nara Institute of Science and Technology (NAIST) |
3rd Author's Name |
Kenji Hirata |
3rd Author's Affiliation |
Nara Institute of Science and Technology (NAIST) |
4th Author's Name |
Emi Sugimura |
4th Author's Affiliation |
Nara Institute of Science and Technology (NAIST) |
5th Author's Name |
Takashi Fuyuki |
5th Author's Affiliation |
Nara Institute of Science and Technology (NAIST) |
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Speaker |
Author-1 |
Date Time |
2012-12-07 15:15:00 |
Presentation Time |
15 minutes |
Registration for |
SDM |
Paper # |
SDM2012-131 |
Volume (vol) |
vol.112 |
Number (no) |
no.337 |
Page |
pp.95-99 |
#Pages |
5 |
Date of Issue |
2012-11-30 (SDM) |
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