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Paper Abstract and Keywords
Presentation 2012-12-07 16:30
Memory characteristics of ReRAM filament confined in localized area.
Sang-gyu Koh, Kentaro Kinoshita, Takahiro Fukuhara, Yusuke Sawai, Satoru Kishida (Tottori Univ.) SDM2012-136
Abstract (in Japanese) (See Japanese page) 
(in English) Clarification of memory characteristics of tiny cell is important for practical use of resistive random access memory (ReRAM). However, limitation of semiconductor micro-fabrication technology hinders to obtain memory characteristics caused by one and only filament confined in tiny cell with area of smaller than 20 x 20 nm2. In this paper, we established a method to prepare a very small memory cell by fabricating ReRAM structure on the tip of a cantilever of atomic force microscope (AFM). We also established a method to operate the small cell at a reset current low enough to avoid serious damage to the cantilever due to Joule heat generated by high current density at the tip of the cantilever. The effective cell size was estimated to be less than φ20 nm due to concentration of electric field at the tip of a cantilever by using an electromagnetic field simulator basing on finite element method. The experimental result that is not consistent with resistive switching models basing on adsorption or absorption of oxygen ions into an anode for set switching to occur was suggested, by making the most of the unique structure having a removable bottom electrode.
Keyword (in Japanese) (See Japanese page) 
(in English) ReRAM / Tiny cell / NiO / AFM / / / /  
Reference Info. IEICE Tech. Rep., vol. 112, no. 337, SDM2012-136, pp. 123-127, Dec. 2012.
Paper # SDM2012-136 
Date of Issue 2012-11-30 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2012-12-07 - 2012-12-07 
Place (in Japanese) (See Japanese page) 
Place (in English) Kyoto Univ. (Katsura) 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Fabrication and Characterization of Si-related Materials and Devices 
Paper Information
Registration To SDM 
Conference Code 2012-12-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Memory characteristics of ReRAM filament confined in localized area. 
Sub Title (in English)  
Keyword(1) ReRAM  
Keyword(2) Tiny cell  
Keyword(3) NiO  
Keyword(4) AFM  
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1st Author's Name Sang-gyu Koh  
1st Author's Affiliation Tottori University (Tottori Univ.)
2nd Author's Name Kentaro Kinoshita  
2nd Author's Affiliation Tottori University (Tottori Univ.)
3rd Author's Name Takahiro Fukuhara  
3rd Author's Affiliation Tottori University (Tottori Univ.)
4th Author's Name Yusuke Sawai  
4th Author's Affiliation Tottori University (Tottori Univ.)
5th Author's Name Satoru Kishida  
5th Author's Affiliation Tottori University (Tottori Univ.)
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Speaker Author-1 
Date Time 2012-12-07 16:30:00 
Presentation Time 15 minutes 
Registration for SDM 
Paper # SDM2012-136 
Volume (vol) vol.112 
Number (no) no.337 
Page pp.123-127 
#Pages 5 
Date of Issue 2012-11-30 (SDM) 

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