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Paper Abstract and Keywords
Presentation 2012-12-13 10:25
Low threshold operation of GaInAsP/InP lateral current injection type membrane laser
Takahiko Shindo, Mitsuaki Futami, Kyohei Doi, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai (Tokyo Tech) LQE2012-123
Abstract (in Japanese) (See Japanese page) 
(in English) The progress in the processing speed and integration density of large scale integrated (LSI) circuits will soon confront limitations associated with resistor-capacitor (RC) delay or ohmic heating in the electrical interconnections. One of the promising candidates to solve this problem is replacing the electrical global wiring on chip by an optical interconnection. A semiconductor membrane laser, which consists of a high-index contrast waveguide, is expected to operate with ultra low threshold current due to an enhanced modal gain. So far, we have demonstrated electrically pumped membrane laser by introducing a lateral current injection (LCI) structure. In this paper, we investigated the lasing characteristics of the LCI-membrane-DFB laser for on-chip optical interconnection. As a result, it was shown that the light output level and the modulation bandwidth required for 10 Gb/s transmission can be achieved at a bias current of 1 mA by adopting a core layer thickness of 150 nm. Furthermore, as a step to realize an ultra-low threshold current operation of membrane laser, LCI-membrane laser with core layer thickness of 450 nm and Be doped GaInAs contact layer was demonstrated, and low threshold current of 3.8 mA was realized.
Keyword (in Japanese) (See Japanese page) 
(in English) Semiconductor membrane laser / Lateral current injection / Strong optical confinement / Surface grating / / / /  
Reference Info. IEICE Tech. Rep., vol. 112, no. 356, LQE2012-123, pp. 9-14, Dec. 2012.
Paper # LQE2012-123 
Date of Issue 2012-12-06 (LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF LQE2012-123

Conference Information
Committee LQE  
Conference Date 2012-12-13 - 2012-12-13 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To LQE 
Conference Code 2012-12-LQE 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Low threshold operation of GaInAsP/InP lateral current injection type membrane laser 
Sub Title (in English)  
Keyword(1) Semiconductor membrane laser  
Keyword(2) Lateral current injection  
Keyword(3) Strong optical confinement  
Keyword(4) Surface grating  
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1st Author's Name Takahiko Shindo  
1st Author's Affiliation Tokyo Institute of Technology (Tokyo Tech)
2nd Author's Name Mitsuaki Futami  
2nd Author's Affiliation Tokyo Institute of Technology (Tokyo Tech)
3rd Author's Name Kyohei Doi  
3rd Author's Affiliation Tokyo Institute of Technology (Tokyo Tech)
4th Author's Name Tomohiro Amemiya  
4th Author's Affiliation Tokyo Institute of Technology (Tokyo Tech)
5th Author's Name Nobuhiko Nishiyama  
5th Author's Affiliation Tokyo Institute of Technology (Tokyo Tech)
6th Author's Name Shigehisa Arai  
6th Author's Affiliation Tokyo Institute of Technology (Tokyo Tech)
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Speaker Author-1 
Date Time 2012-12-13 10:25:00 
Presentation Time 25 minutes 
Registration for LQE 
Paper # LQE2012-123 
Volume (vol) vol.112 
Number (no) no.356 
Page pp.9-14 
#Pages 6 
Date of Issue 2012-12-06 (LQE) 

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