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Paper Abstract and Keywords
Presentation 2012-12-13 13:30
A 1.2-2.0 GHz-band GaAs pHEMT Cascode Power Amplifier MMIC Consisting of Independently Biased Transistors
Satoshi Tasaki, Yoichiro Takayama, Ryo Ishikawa, Kazuhiko Honjo (UEC) MW2012-127
Abstract (in Japanese) (See Japanese page) 
(in English) In cascode circuit configuration, a method to expand circuit design range by setting a DC bias node to a connection point between two transistors is proposed. This method can set independently operating mode of two transistors. Focusing on bias voltage dependence of amplification characteristics, a cascode power amplifier of independently biased GaAs pHEMT was designed and fabricated for the purpose of realizing high-efficiency characteristic and miniaturization of circuit. The performance of the amplifier was evaluated by focusing on bias voltage dependence of amplification characteristic. As a result, power added efficiency (PAE) of the amplifier was achieved over 53% from 1.2 to 2.0 GHz. Also, the performance of this cascode configuration showed superior performance compared to the conventional cascode one.
Keyword (in Japanese) (See Japanese page) 
(in English) MMICs / microwave circuit / power amplifiers / cascode circuit / independently biased cascode amplifier / / /  
Reference Info. IEICE Tech. Rep., vol. 112, no. 355, MW2012-127, pp. 1-6, Dec. 2012.
Paper # MW2012-127 
Date of Issue 2012-12-06 (MW) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF MW2012-127

Conference Information
Committee MW  
Conference Date 2012-12-13 - 2012-12-14 
Place (in Japanese) (See Japanese page) 
Place (in English) Univ. of Yamanashi 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Microwave Technologies 
Paper Information
Registration To MW 
Conference Code 2012-12-MW 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) A 1.2-2.0 GHz-band GaAs pHEMT Cascode Power Amplifier MMIC Consisting of Independently Biased Transistors 
Sub Title (in English)  
Keyword(1) MMICs  
Keyword(2) microwave circuit  
Keyword(3) power amplifiers  
Keyword(4) cascode circuit  
Keyword(5) independently biased cascode amplifier  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Satoshi Tasaki  
1st Author's Affiliation The University of Electro-Communications (UEC)
2nd Author's Name Yoichiro Takayama  
2nd Author's Affiliation The University of Electro-Communications (UEC)
3rd Author's Name Ryo Ishikawa  
3rd Author's Affiliation The University of Electro-Communications (UEC)
4th Author's Name Kazuhiko Honjo  
4th Author's Affiliation The University of Electro-Communications (UEC)
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Speaker Author-1 
Date Time 2012-12-13 13:30:00 
Presentation Time 30 minutes 
Registration for MW 
Paper # MW2012-127 
Volume (vol) vol.112 
Number (no) no.355 
Page pp.1-6 
#Pages 6 
Date of Issue 2012-12-06 (MW) 

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