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Paper Abstract and Keywords
Presentation 2012-12-17 13:25
77 GHz-band High Power Amplifier Module using Redistribution Layer Technology
Masaru Sato, Yoshikatsu Ishizuki, Shinya Sasaki, Hiroshi Matsumura, Toshihide Suzuki, Motoaki Tani (Fujitsu Lab.) ED2012-94
Abstract (in Japanese) (See Japanese page) 
(in English) We have developed a new packaging technology that enables the millimeter-wave power amplifier that can be employed in applications such as automotive radar and wireless communications devices. One effective way to produce compact, low-cost millimeter-wave transceivers is to integrate high-frequency RF circuitry onto a CMOS chip. At the same time, for a normal CMOS circuitry, which operates at low voltages, the high power amplifiers employed in transmitters has proven a challenge for the integration. As a result, there has been a need for a technology that can enable CMOS power amplifiers to achieve higher output. We have developed a technology that combines millimeter-wave high-frequency signals outputted from multiple power amplifiers within an off-chip module. A prototype module incorporating CMOS power amplifiers based on this technology was able to produce 15 dBm output in the 77-GHz frequency band. As result, it will become possible to develop CMOS millimeter-wave transceiver that employ high-output power amplifiers, which is expected to substantially contribute to the production of smaller, low-cost devices.
Keyword (in Japanese) (See Japanese page) 
(in English) CMOS / Power amplifier / RDL / Wafer level package / / / /  
Reference Info. IEICE Tech. Rep., vol. 112, no. 364, ED2012-94, pp. 7-10, Dec. 2012.
Paper # ED2012-94 
Date of Issue 2012-12-10 (ED) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee ED  
Conference Date 2012-12-17 - 2012-12-18 
Place (in Japanese) (See Japanese page) 
Place (in English) Tohoku University 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Millimeter wave / Terahertz devices and systems 
Paper Information
Registration To ED 
Conference Code 2012-12-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) 77 GHz-band High Power Amplifier Module using Redistribution Layer Technology 
Sub Title (in English)  
Keyword(1) CMOS  
Keyword(2) Power amplifier  
Keyword(3) RDL  
Keyword(4) Wafer level package  
Keyword(5)  
Keyword(6)  
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1st Author's Name Masaru Sato  
1st Author's Affiliation Fujitsu Laboratories Ltd. (Fujitsu Lab.)
2nd Author's Name Yoshikatsu Ishizuki  
2nd Author's Affiliation Fujitsu Laboratories Ltd. (Fujitsu Lab.)
3rd Author's Name Shinya Sasaki  
3rd Author's Affiliation Fujitsu Laboratories Ltd. (Fujitsu Lab.)
4th Author's Name Hiroshi Matsumura  
4th Author's Affiliation Fujitsu Laboratories Ltd. (Fujitsu Lab.)
5th Author's Name Toshihide Suzuki  
5th Author's Affiliation Fujitsu Laboratories Ltd. (Fujitsu Lab.)
6th Author's Name Motoaki Tani  
6th Author's Affiliation Fujitsu Laboratories Ltd. (Fujitsu Lab.)
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Speaker Author-1 
Date Time 2012-12-17 13:25:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2012-94 
Volume (vol) vol.112 
Number (no) no.364 
Page pp.7-10 
#Pages 4 
Date of Issue 2012-12-10 (ED) 

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