Paper Abstract and Keywords |
Presentation |
2012-12-17 13:25
77 GHz-band High Power Amplifier Module using Redistribution Layer Technology Masaru Sato, Yoshikatsu Ishizuki, Shinya Sasaki, Hiroshi Matsumura, Toshihide Suzuki, Motoaki Tani (Fujitsu Lab.) ED2012-94 Link to ES Tech. Rep. Archives: ED2012-94 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We have developed a new packaging technology that enables the millimeter-wave power amplifier that can be employed in applications such as automotive radar and wireless communications devices. One effective way to produce compact, low-cost millimeter-wave transceivers is to integrate high-frequency RF circuitry onto a CMOS chip. At the same time, for a normal CMOS circuitry, which operates at low voltages, the high power amplifiers employed in transmitters has proven a challenge for the integration. As a result, there has been a need for a technology that can enable CMOS power amplifiers to achieve higher output. We have developed a technology that combines millimeter-wave high-frequency signals outputted from multiple power amplifiers within an off-chip module. A prototype module incorporating CMOS power amplifiers based on this technology was able to produce 15 dBm output in the 77-GHz frequency band. As result, it will become possible to develop CMOS millimeter-wave transceiver that employ high-output power amplifiers, which is expected to substantially contribute to the production of smaller, low-cost devices. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
CMOS / Power amplifier / RDL / Wafer level package / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 112, no. 364, ED2012-94, pp. 7-10, Dec. 2012. |
Paper # |
ED2012-94 |
Date of Issue |
2012-12-10 (ED) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2012-94 Link to ES Tech. Rep. Archives: ED2012-94 |
Conference Information |
Committee |
ED |
Conference Date |
2012-12-17 - 2012-12-18 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Tohoku University |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Millimeter wave / Terahertz devices and systems |
Paper Information |
Registration To |
ED |
Conference Code |
2012-12-ED |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
77 GHz-band High Power Amplifier Module using Redistribution Layer Technology |
Sub Title (in English) |
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Keyword(1) |
CMOS |
Keyword(2) |
Power amplifier |
Keyword(3) |
RDL |
Keyword(4) |
Wafer level package |
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1st Author's Name |
Masaru Sato |
1st Author's Affiliation |
Fujitsu Laboratories Ltd. (Fujitsu Lab.) |
2nd Author's Name |
Yoshikatsu Ishizuki |
2nd Author's Affiliation |
Fujitsu Laboratories Ltd. (Fujitsu Lab.) |
3rd Author's Name |
Shinya Sasaki |
3rd Author's Affiliation |
Fujitsu Laboratories Ltd. (Fujitsu Lab.) |
4th Author's Name |
Hiroshi Matsumura |
4th Author's Affiliation |
Fujitsu Laboratories Ltd. (Fujitsu Lab.) |
5th Author's Name |
Toshihide Suzuki |
5th Author's Affiliation |
Fujitsu Laboratories Ltd. (Fujitsu Lab.) |
6th Author's Name |
Motoaki Tani |
6th Author's Affiliation |
Fujitsu Laboratories Ltd. (Fujitsu Lab.) |
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Speaker |
Author-1 |
Date Time |
2012-12-17 13:25:00 |
Presentation Time |
25 minutes |
Registration for |
ED |
Paper # |
ED2012-94 |
Volume (vol) |
vol.112 |
Number (no) |
no.364 |
Page |
pp.7-10 |
#Pages |
4 |
Date of Issue |
2012-12-10 (ED) |
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