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| Presentation | 2012-12-17 15:55 [Poster Presentation] 3x Write and 5x Read Speed Increase for RRAM with Disturb Free Bipolar Operation Sheyang Ning (Chuo Univ./Univ. of Tokyo), Tomoko Ogura Iwasaki, Ken Takeuchi (Chuo Univ.)  ICD2012-99 Link to ES Tech. Rep. Archives: ICD2012-99 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | The RRAM high speed operation is handicapped by the need to verify during set/reset, and the limited read voltage for read disturb prevention. In this presentation, two circuit level optimizations, Bipolar verification and Reverse Read with Dynamic Write-Back are proposed to provide speed and reliability improvement. Bipolar verification reduces the Source Line (SL) charge/discharge time between program and verify modes. And Dynamic Write-Back allows higher read current, thereby reducing the read time with no read disturb degradation. Measurement of 50 nm $\mathrm{{HfO}_2}$ RRAM read disturb in forward and reverse directions supports the potential for 3${\times}$ write speed, 5${\times}$ read speed increase as well as read disturb immunity with the occasional write back operation. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | RRAM / Fast Verify Time / Fast Read / Dynamic Write-Back / Read Disturb Immunity / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 112, no. 365, ICD2012-99, pp. 43-43, Dec. 2012. | |
| Paper # | ICD2012-99 | |
| Date of Issue | 2012-12-10 (ICD) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ICD2012-99 Link to ES Tech. Rep. Archives: ICD2012-99 |
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| Conference Information | |
| Committee | ICD |
| Conference Date | 2012-12-17 - 2012-12-18 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Tokyo Tech Front |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | ICD |
| Conference Code | 2012-12-ICD |
| Language | English |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | 3x Write and 5x Read Speed Increase for RRAM with Disturb Free Bipolar Operation |
| Sub Title (in English) | |
| Keyword(1) | RRAM |
| Keyword(2) | Fast Verify Time |
| Keyword(3) | Fast Read |
| Keyword(4) | Dynamic Write-Back |
| Keyword(5) | Read Disturb Immunity |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Sheyang Ning |
| 1st Author's Affiliation | Chuo University/University of Tokyo (Chuo Univ./Univ. of Tokyo) |
| 2nd Author's Name | Tomoko Ogura Iwasaki |
| 2nd Author's Affiliation | Chuo University (Chuo Univ.) |
| 3rd Author's Name | Ken Takeuchi |
| 3rd Author's Affiliation | Chuo University (Chuo Univ.) |
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| Speaker | Author-1 |
| Date Time | 2012-12-17 15:55:00 |
| Presentation Time | 120 minutes |
| Registration for | ICD |
| Paper # | ICD2012-99 |
| Volume (vol) | vol.112 |
| Number (no) | no.365 |
| Page | p.43 |
| #Pages | 1 |
| Date of Issue | 2012-12-10 (ICD) |
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