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| Presentation | 2013-01-18 13:25 Analysis of Lag Phenomena, Current Collapse and Breakdown Characteristics in Source-Field-Plate AlGaN/GaN HEMTs Hideyuki Hanawa, Hiraku Onodera, Kazushige Horio (Shibaura Inst. Tech.)  ED2012-123 MW2012-153 Link to ES Tech. Rep. Archives: ED2012-123 MW2012-153 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Two-dimensional analysis of lag phenomena, current collapse and breakdown voltages in source-field-plate AlGaN/GaN HEMTs is performed, and the results are compared with those for the case of gate-field-plate structure. It is shown that the reduction rate of drain-lag is similar between the two structures, but the reduction rates of gate lag and current collapse are smaller for the source-field-plate structure. This is because the electric field at the drain edge of the gate becomes higher in the off state and the trapping effects become more significant. For this reason, the off-state breakdown voltage is a little lower in the source-field-plate structure. It is suggested that there is an optimum thickness of SiN passivation layer to minimize the buffer-related current collapse in both structures. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | GaN / HEMT / field plate / lag phenomena / current collapse / breakdown voltage / two-dimensional analysis / | |
| Reference Info. | IEICE Tech. Rep., vol. 112, no. 380, ED2012-123, pp. 57-62, Jan. 2013. | |
| Paper # | ED2012-123 | |
| Date of Issue | 2013-01-10 (ED, MW) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2012-123 MW2012-153 Link to ES Tech. Rep. Archives: ED2012-123 MW2012-153 |
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| Conference Information | |
| Committee | MW ED |
| Conference Date | 2013-01-17 - 2013-01-18 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Compound Semiconductor IC, High-speed and high-frequency devices, Microwave Technologies, etc. |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2013-01-MW-ED |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Analysis of Lag Phenomena, Current Collapse and Breakdown Characteristics in Source-Field-Plate AlGaN/GaN HEMTs |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | HEMT |
| Keyword(3) | field plate |
| Keyword(4) | lag phenomena |
| Keyword(5) | current collapse |
| Keyword(6) | breakdown voltage |
| Keyword(7) | two-dimensional analysis |
| Keyword(8) | |
| 1st Author's Name | Hideyuki Hanawa |
| 1st Author's Affiliation | Shibaura Institute of Technology (Shibaura Inst. Tech.) |
| 2nd Author's Name | Hiraku Onodera |
| 2nd Author's Affiliation | Shibaura Institute of Technology (Shibaura Inst. Tech.) |
| 3rd Author's Name | Kazushige Horio |
| 3rd Author's Affiliation | Shibaura Institute of Technology (Shibaura Inst. Tech.) |
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| Speaker | Author-1 |
| Date Time | 2013-01-18 13:25:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2012-123, MW2012-153 |
| Volume (vol) | vol.112 |
| Number (no) | no.380(ED), no.381(MW) |
| Page | pp.57-62 |
| #Pages | 6 |
| Date of Issue | 2013-01-10 (ED, MW) |
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