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Paper Abstract and Keywords
Presentation 2013-02-27 14:10
Variation of Seebeck coefficient of Si-on-insulator layer induced by bias-injected carriers
Hiroya Ikeda, Yuhei Suzuki, Kazutoshi Miwa (Shizuoka Univ.), Faiz Salleh (Shizuoka Univ./Research Fellow of JSPS) ED2012-129 SDM2012-158
Abstract (in Japanese) (See Japanese page) 
(in English) The enhancement of Seebeck coefficient by controlling the Si Fermi energy is one of key issues for enhancing the thermoelectric performance by Si nanostructures. For this purpose, the variation of Seebeck coefficient in ultrathin Si-on-insulator (SOI) layer by external bias was experimentally and theoretically investigated. It was found that the SOI Seebeck coefficient is mainly tuned by the carrier concentration or Fermi energy near the buried-oxide layer and includes the influence of phonon drag.
Keyword (in Japanese) (See Japanese page) 
(in English) thermopile IR photodetector / Seebeck coefficient / ultrathin SOI layer / Fermi energy / phonon drag / / /  
Reference Info. IEICE Tech. Rep., vol. 112, no. 446, SDM2012-158, pp. 7-11, Feb. 2013.
Paper # SDM2012-158 
Date of Issue 2013-02-20 (ED, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2012-129 SDM2012-158

Conference Information
Committee SDM ED  
Conference Date 2013-02-27 - 2013-02-28 
Place (in Japanese) (See Japanese page) 
Place (in English) Hokkaido Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Functional nanodevices and related technologies 
Paper Information
Registration To SDM 
Conference Code 2013-02-SDM-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Variation of Seebeck coefficient of Si-on-insulator layer induced by bias-injected carriers 
Sub Title (in English)  
Keyword(1) thermopile IR photodetector  
Keyword(2) Seebeck coefficient  
Keyword(3) ultrathin SOI layer  
Keyword(4) Fermi energy  
Keyword(5) phonon drag  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Hiroya Ikeda  
1st Author's Affiliation Shizuoka University (Shizuoka Univ.)
2nd Author's Name Yuhei Suzuki  
2nd Author's Affiliation Shizuoka University (Shizuoka Univ.)
3rd Author's Name Kazutoshi Miwa  
3rd Author's Affiliation Shizuoka University (Shizuoka Univ.)
4th Author's Name Faiz Salleh  
4th Author's Affiliation Shizuoka University/Research Fellow of the Japan Society for the Promotion of Science (Shizuoka Univ./Research Fellow of JSPS)
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Speaker Author-1 
Date Time 2013-02-27 14:10:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # ED2012-129, SDM2012-158 
Volume (vol) vol.112 
Number (no) no.445(ED), no.446(SDM) 
Page pp.7-11 
#Pages 5 
Date of Issue 2013-02-20 (ED, SDM) 

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