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Paper Abstract and Keywords
Presentation 2013-04-12 14:45
[Invited Lecture] A 13.8pJ/Access/Mbit SRAM with Charge Collector Circuits for Effective Use of Non-Selected Bit Line Charges
Shinichi Moriwaki, Yasue Yamamoto, Toshikazu Suzuki (STARC), Atsushi Kawasumi (Toshiba), Shinji Miyano, Hirofumi Shinohara (STARC), Takayasu Sakurai (Univ. Tokyo) ICD2013-20
Abstract (in Japanese) (See Japanese page) 
(in English) 1Mb SRAM with charge collector circuits for effective use of non-selected bit line charges has been fabricated in 40nm technology. These circuits reduce two major wasted power sources of the low voltage SRAM: excess bit line swing due to random variation and bit line swing of non-selected columns. The lowest power consumption of 13.8pJ/Access/Mbit in the previous works has been achieved.
Keyword (in Japanese) (See Japanese page) 
(in English) SRAM / Hierarchical Bit Line / Non-Selected Column / Charge Share / / / /  
Reference Info. IEICE Tech. Rep., vol. 113, no. 1, ICD2013-20, pp. 103-108, April 2013.
Paper # ICD2013-20 
Date of Issue 2013-04-04 (ICD) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee ICD  
Conference Date 2013-04-11 - 2013-04-12 
Place (in Japanese) (See Japanese page) 
Place (in English) Advanced Industrial Science and Technology (AIST) 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Memory Device Technologies 
Paper Information
Registration To ICD 
Conference Code 2013-04-ICD 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) A 13.8pJ/Access/Mbit SRAM with Charge Collector Circuits for Effective Use of Non-Selected Bit Line Charges 
Sub Title (in English)  
Keyword(1) SRAM  
Keyword(2) Hierarchical Bit Line  
Keyword(3) Non-Selected Column  
Keyword(4) Charge Share  
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Keyword(6)  
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1st Author's Name Shinichi Moriwaki  
1st Author's Affiliation Semiconductor Technology Academic Research Center (STARC)
2nd Author's Name Yasue Yamamoto  
2nd Author's Affiliation Semiconductor Technology Academic Research Center (STARC)
3rd Author's Name Toshikazu Suzuki  
3rd Author's Affiliation Semiconductor Technology Academic Research Center (STARC)
4th Author's Name Atsushi Kawasumi  
4th Author's Affiliation Toshiba Corporation (Toshiba)
5th Author's Name Shinji Miyano  
5th Author's Affiliation Semiconductor Technology Academic Research Center (STARC)
6th Author's Name Hirofumi Shinohara  
6th Author's Affiliation Semiconductor Technology Academic Research Center (STARC)
7th Author's Name Takayasu Sakurai  
7th Author's Affiliation The University of Tokyo (Univ. Tokyo)
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Speaker Author-1 
Date Time 2013-04-12 14:45:00 
Presentation Time 25 minutes 
Registration for ICD 
Paper # ICD2013-20 
Volume (vol) vol.113 
Number (no) no.1 
Page pp.103-108 
#Pages
Date of Issue 2013-04-04 (ICD) 


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