| Paper Abstract and Keywords |
| Presentation |
2013-04-12 14:45
[Invited Lecture]
A 13.8pJ/Access/Mbit SRAM with Charge Collector Circuits for Effective Use of Non-Selected Bit Line Charges Shinichi Moriwaki, Yasue Yamamoto, Toshikazu Suzuki (STARC), Atsushi Kawasumi (Toshiba), Shinji Miyano, Hirofumi Shinohara (STARC), Takayasu Sakurai (Univ. Tokyo) ICD2013-20 |
| Abstract |
(in Japanese) |
(See Japanese page) |
| (in English) |
1Mb SRAM with charge collector circuits for effective use of non-selected bit line charges has been fabricated in 40nm technology. These circuits reduce two major wasted power sources of the low voltage SRAM: excess bit line swing due to random variation and bit line swing of non-selected columns. The lowest power consumption of 13.8pJ/Access/Mbit in the previous works has been achieved. |
| Keyword |
(in Japanese) |
(See Japanese page) |
| (in English) |
SRAM / Hierarchical Bit Line / Non-Selected Column / Charge Share / / / / |
| Reference Info. |
IEICE Tech. Rep., vol. 113, no. 1, ICD2013-20, pp. 103-108, April 2013. |
| Paper # |
ICD2013-20 |
| Date of Issue |
2013-04-04 (ICD) |
| ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
| Download PDF |
ICD2013-20 |
| Conference Information |
| Committee |
ICD |
| Conference Date |
2013-04-11 - 2013-04-12 |
| Place (in Japanese) |
(See Japanese page) |
| Place (in English) |
Advanced Industrial Science and Technology (AIST) |
| Topics (in Japanese) |
(See Japanese page) |
| Topics (in English) |
Memory Device Technologies |
| Paper Information |
| Registration To |
ICD |
| Conference Code |
2013-04-ICD |
| Language |
Japanese |
| Title (in Japanese) |
(See Japanese page) |
| Sub Title (in Japanese) |
(See Japanese page) |
| Title (in English) |
A 13.8pJ/Access/Mbit SRAM with Charge Collector Circuits for Effective Use of Non-Selected Bit Line Charges |
| Sub Title (in English) |
|
| Keyword(1) |
SRAM |
| Keyword(2) |
Hierarchical Bit Line |
| Keyword(3) |
Non-Selected Column |
| Keyword(4) |
Charge Share |
| Keyword(5) |
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| Keyword(6) |
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| Keyword(7) |
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| 1st Author's Name |
Shinichi Moriwaki |
| 1st Author's Affiliation |
Semiconductor Technology Academic Research Center (STARC) |
| 2nd Author's Name |
Yasue Yamamoto |
| 2nd Author's Affiliation |
Semiconductor Technology Academic Research Center (STARC) |
| 3rd Author's Name |
Toshikazu Suzuki |
| 3rd Author's Affiliation |
Semiconductor Technology Academic Research Center (STARC) |
| 4th Author's Name |
Atsushi Kawasumi |
| 4th Author's Affiliation |
Toshiba Corporation (Toshiba) |
| 5th Author's Name |
Shinji Miyano |
| 5th Author's Affiliation |
Semiconductor Technology Academic Research Center (STARC) |
| 6th Author's Name |
Hirofumi Shinohara |
| 6th Author's Affiliation |
Semiconductor Technology Academic Research Center (STARC) |
| 7th Author's Name |
Takayasu Sakurai |
| 7th Author's Affiliation |
The University of Tokyo (Univ. Tokyo) |
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| Speaker |
Author-1 |
| Date Time |
2013-04-12 14:45:00 |
| Presentation Time |
25 minutes |
| Registration for |
ICD |
| Paper # |
ICD2013-20 |
| Volume (vol) |
vol.113 |
| Number (no) |
no.1 |
| Page |
pp.103-108 |
| #Pages |
6 |
| Date of Issue |
2013-04-04 (ICD) |