| Paper Abstract and Keywords |
| Presentation |
2013-05-16 13:55
Identification of defect structures forming the deep levels in 4H-SiC Hiroki Nakane, Masashi Kato, Masaya Ichimura (Nagoya Inst. of Tech.), Takeshi Ohshima (JAEA) ED2013-17 CPM2013-2 SDM2013-24 |
| Abstract |
(in Japanese) |
(See Japanese page) |
| (in English) |
(Not available yet) |
| Keyword |
(in Japanese) |
(See Japanese page) |
| (in English) |
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| Reference Info. |
IEICE Tech. Rep., vol. 113, no. 39, ED2013-17, pp. 7-12, May 2013. |
| Paper # |
ED2013-17 |
| Date of Issue |
2013-05-09 (ED, CPM, SDM) |
| ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
| Download PDF |
ED2013-17 CPM2013-2 SDM2013-24 |
| Conference Information |
| Committee |
SDM ED CPM |
| Conference Date |
2013-05-16 - 2013-05-17 |
| Place (in Japanese) |
(See Japanese page) |
| Place (in English) |
Shizuoka Univ. (Hamamatsu) Graduate School of Sci. and Technol. |
| Topics (in Japanese) |
(See Japanese page) |
| Topics (in English) |
Crystal Growth, Characterization, Device, etc (compound semiconductors, Si, SiGe, optical and electronic materials) |
| Paper Information |
| Registration To |
ED |
| Conference Code |
2013-05-SDM-ED-CPM |
| Language |
Japanese |
| Title (in Japanese) |
(See Japanese page) |
| Sub Title (in Japanese) |
(See Japanese page) |
| Title (in English) |
Identification of defect structures forming the deep levels in 4H-SiC |
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| 1st Author's Name |
Hiroki Nakane |
| 1st Author's Affiliation |
Nagoya Institute of technology (Nagoya Inst. of Tech.) |
| 2nd Author's Name |
Masashi Kato |
| 2nd Author's Affiliation |
Nagoya Institute of technology (Nagoya Inst. of Tech.) |
| 3rd Author's Name |
Masaya Ichimura |
| 3rd Author's Affiliation |
Nagoya Institute of technology (Nagoya Inst. of Tech.) |
| 4th Author's Name |
Takeshi Ohshima |
| 4th Author's Affiliation |
Japan Atomic Energy Agency (JAEA) |
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| Speaker |
Author-1 |
| Date Time |
2013-05-16 13:55:00 |
| Presentation Time |
25 minutes |
| Registration for |
ED |
| Paper # |
ED2013-17, CPM2013-2, SDM2013-24 |
| Volume (vol) |
vol.113 |
| Number (no) |
no.39(ED), no.40(CPM), no.41(SDM) |
| Page |
pp.7-12 |
| #Pages |
6 |
| Date of Issue |
2013-05-09 (ED, CPM, SDM) |