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Paper Abstract and Keywords
Presentation 2013-05-16 15:45
Formation of GaAsN alloys by surface nitridation
Noriyuki Urakami, Akihiro Wakahara, Hiroto Sekiguchi, Hiroshi Okada (Toyohashi Univ. of Tech.) ED2013-20 CPM2013-5 SDM2013-27
Abstract (in Japanese) (See Japanese page) 
(in English) GaAsN alloys was grown by surface nitridation and applied for the growth of quantum well (QW). Increase of incorporation of N atoms into GaAsN with decrease of As2 pressure suggests that N atoms incorporations governed by competing the group-V sites with As atoms. Photoluminescence (PL) peak energy was not dependent on the nitridation time of from 5~15 sec and the energy was approximately 1.37 eV. On the other hands, PL peak energy was 1.31 eV for the nitridation time of 20 sec. The PL intensity was decreased by two orders than those of the nitridetion time of 5~15 sec. The reflection high energy electron diffraction (RHEED) pattern showed As-stabilized (2×4) and N-stabilized (3×3) reconstructions for the samples nitrided by 15sec and 20sec, respectively. Stable Ga-N bonds remain after the interruption time for the surface condition of 15 sec nitridation. Formation of N-clustering consisted a number of N-N pairs lead to the decrease of PL intensity due to the increase of nonradiative center for the surface condition of 20 sec nitridation., In the GaAsN/GaP QW, PL peak energy shifted to low-energy side and the intensity increased with increasing the amount of N supply.
Keyword (in Japanese) (See Japanese page) 
(in English) GaAsN / Dilute nitride / III-V-N / Surface nitridation / / / /  
Reference Info. IEICE Tech. Rep., vol. 113, no. 39, ED2013-20, pp. 23-26, May 2013.
Paper # ED2013-20 
Date of Issue 2013-05-09 (ED, CPM, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2013-20 CPM2013-5 SDM2013-27

Conference Information
Committee SDM ED CPM  
Conference Date 2013-05-16 - 2013-05-17 
Place (in Japanese) (See Japanese page) 
Place (in English) Shizuoka Univ. (Hamamatsu) Graduate School of Sci. and Technol. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Crystal Growth, Characterization, Device, etc (compound semiconductors, Si, SiGe, optical and electronic materials) 
Paper Information
Registration To ED 
Conference Code 2013-05-SDM-ED-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Formation of GaAsN alloys by surface nitridation 
Sub Title (in English)  
Keyword(1) GaAsN  
Keyword(2) Dilute nitride  
Keyword(3) III-V-N  
Keyword(4) Surface nitridation  
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1st Author's Name Noriyuki Urakami  
1st Author's Affiliation Toyohashi University of Technology (Toyohashi Univ. of Tech.)
2nd Author's Name Akihiro Wakahara  
2nd Author's Affiliation Toyohashi University of Technology (Toyohashi Univ. of Tech.)
3rd Author's Name Hiroto Sekiguchi  
3rd Author's Affiliation Toyohashi University of Technology (Toyohashi Univ. of Tech.)
4th Author's Name Hiroshi Okada  
4th Author's Affiliation Toyohashi University of Technology (Toyohashi Univ. of Tech.)
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Speaker Author-1 
Date Time 2013-05-16 15:45:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2013-20, CPM2013-5, SDM2013-27 
Volume (vol) vol.113 
Number (no) no.39(ED), no.40(CPM), no.41(SDM) 
Page pp.23-26 
#Pages 4 
Date of Issue 2013-05-09 (ED, CPM, SDM) 

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