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Paper Abstract and Keywords
Presentation 2013-05-16 13:30
Evaluation of carrier lifetime for 4H-SiC surfaces treated by various processes
Yuto Mori, Masashi Kato, Masaya Ichimura (Nagoya Inst. of Tech.) ED2013-16 CPM2013-1 SDM2013-23
Abstract (in Japanese) (See Japanese page) 
(in English) For very high voltage SiC bipolar devices, the carrier lifetime is an important parameter which influences the device performance. Observation of the surface recombination velocity is important in order to control the carrier lifetime. In this study, we show experimental data for the carrier lifetime in 4H-SiC whose surfaces were treated by various processes. As a result, we found that the reactive ion etching (RIE) decrease the carrier lifetime. We considered that point defects introduced by RIE influence the carrier lifetime.
Keyword (in Japanese) (See Japanese page) 
(in English) 4H-SiC / キャリアライフタイム / 表面再結合 / μ-PCD / / / /  
Reference Info. IEICE Tech. Rep., vol. 113, no. 39, ED2013-16, pp. 1-6, May 2013.
Paper # ED2013-16 
Date of Issue 2013-05-09 (ED, CPM, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2013-16 CPM2013-1 SDM2013-23

Conference Information
Committee SDM ED CPM  
Conference Date 2013-05-16 - 2013-05-17 
Place (in Japanese) (See Japanese page) 
Place (in English) Shizuoka Univ. (Hamamatsu) Graduate School of Sci. and Technol. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Crystal Growth, Characterization, Device, etc (compound semiconductors, Si, SiGe, optical and electronic materials) 
Paper Information
Registration To ED 
Conference Code 2013-05-SDM-ED-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Evaluation of carrier lifetime for 4H-SiC surfaces treated by various processes 
Sub Title (in English)  
Keyword(1) 4H-SiC  
Keyword(2) キャリアライフタイム  
Keyword(3) 表面再結合  
Keyword(4) μ-PCD  
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1st Author's Name Yuto Mori  
1st Author's Affiliation Nagoya Institute of Technology (Nagoya Inst. of Tech.)
2nd Author's Name Masashi Kato  
2nd Author's Affiliation Nagoya Institute of Technology (Nagoya Inst. of Tech.)
3rd Author's Name Masaya Ichimura  
3rd Author's Affiliation Nagoya Institute of Technology (Nagoya Inst. of Tech.)
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Speaker Author-1 
Date Time 2013-05-16 13:30:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2013-16, CPM2013-1, SDM2013-23 
Volume (vol) vol.113 
Number (no) no.39(ED), no.40(CPM), no.41(SDM) 
Page pp.1-6 
#Pages 6 
Date of Issue 2013-05-09 (ED, CPM, SDM) 

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