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Paper Abstract and Keywords
Presentation 2013-06-18 13:35
Epitaxial growth of iron oxide nanodots on Si substrate and their electronic states
Takafumi Ishibe, Yoshiaki Nakamura, Hideki Matsui, Shotaro Takeuchi, Akira Sakai (Osaka Univ.) SDM2013-54
Abstract (in Japanese) (See Japanese page) 
(in English) Iron oxide thin film on Si substrate has been expected as a low-cost and ecological material for resistive random access memory. However, there is a problem of small ON/OFF resistive ratio in the iron oxide film on Si. So, it is needed to grow the high quality iron oxide film on Si substrates epitaxially to suppress leak electric current. We focused on epitaxial iron oxide nanodots with less crystal defects. In this study, we develop the epitaxial growth technique for iron oxide nanodots on Si substrate by ultrathin SiO2 film and measure their electronic states using scanning tunneling spectroscopy.
Keyword (in Japanese) (See Japanese page) 
(in English) Iron oxide / Molecular beam epitaxy / Nanodots / Electronic states / Scanning tunneling microscopy / / /  
Reference Info. IEICE Tech. Rep., vol. 113, no. 87, SDM2013-54, pp. 51-55, June 2013.
Paper # SDM2013-54 
Date of Issue 2013-06-11 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2013-06-18 - 2013-06-18 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Science and Technology for Dielectric Thin Films for Electron Devices 
Paper Information
Registration To SDM 
Conference Code 2013-06-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Epitaxial growth of iron oxide nanodots on Si substrate and their electronic states 
Sub Title (in English)  
Keyword(1) Iron oxide  
Keyword(2) Molecular beam epitaxy  
Keyword(3) Nanodots  
Keyword(4) Electronic states  
Keyword(5) Scanning tunneling microscopy  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Takafumi Ishibe  
1st Author's Affiliation Osaka University (Osaka Univ.)
2nd Author's Name Yoshiaki Nakamura  
2nd Author's Affiliation Osaka University (Osaka Univ.)
3rd Author's Name Hideki Matsui  
3rd Author's Affiliation Osaka University (Osaka Univ.)
4th Author's Name Shotaro Takeuchi  
4th Author's Affiliation Osaka University (Osaka Univ.)
5th Author's Name Akira Sakai  
5th Author's Affiliation Osaka University (Osaka Univ.)
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Speaker Author-3 
Date Time 2013-06-18 13:35:00 
Presentation Time 20 minutes 
Registration for SDM 
Paper # SDM2013-54 
Volume (vol) vol.113 
Number (no) no.87 
Page pp.51-55 
#Pages 5 
Date of Issue 2013-06-11 (SDM) 

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