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Paper Abstract and Keywords
Presentation 2013-06-18 17:25
[Invited Lecture] 4H-SiC MOS interface states studied by electron spin resonance spectroscopy
T. Umeda (Univ. of Tsukuba), M. Okamoto, R. Kosugi (AIST), R. Arai, Y. Satoh (Univ. of Tsukuba), S. Harada, Hajime Okumura (AIST), T. Makino, Takeshi Ohshima (JAEA) SDM2013-64
Abstract (in Japanese) (See Japanese page) 
(in English) Normally-off 4H-SiC MOSFETs (Metal-Oxide-Semiconductor Field Effect Transistors) are promising devices for power electronics; however, their MOS interfaces are not yet perfect for practical applications. One big issue for this system is an unknown origin of a high interface-state density (Dit) at the 4H-SiC/SiO2 interface. Therefore, we study the origin of the Dit by means of electrically detected magnetic resonance (EDMR) spectroscopy on 4H-SiC MOSFETs. We found a striking difference in the interface defects between the 4H-SiC(0001) and (000-1) faces as well as the characteristic behaviors of nitrogen atoms at the SiC MOS interfaces that are not observed in Si MOS structures.
Keyword (in Japanese) (See Japanese page) 
(in English) 4H-SiC / MOSFET / MOS interface / interface defect / ESR / EDMR / nitridation /  
Reference Info. IEICE Tech. Rep., vol. 113, no. 87, SDM2013-64, pp. 101-105, June 2013.
Paper # SDM2013-64 
Date of Issue 2013-06-11 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2013-06-18 - 2013-06-18 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Science and Technology for Dielectric Thin Films for Electron Devices 
Paper Information
Registration To SDM 
Conference Code 2013-06-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) 4H-SiC MOS interface states studied by electron spin resonance spectroscopy 
Sub Title (in English)  
Keyword(1) 4H-SiC  
Keyword(2) MOSFET  
Keyword(3) MOS interface  
Keyword(4) interface defect  
Keyword(5) ESR  
Keyword(6) EDMR  
Keyword(7) nitridation  
Keyword(8)  
1st Author's Name T. Umeda  
1st Author's Affiliation University of Tsukuba (Univ. of Tsukuba)
2nd Author's Name M. Okamoto  
2nd Author's Affiliation AIST (AIST)
3rd Author's Name R. Kosugi  
3rd Author's Affiliation AIST (AIST)
4th Author's Name R. Arai  
4th Author's Affiliation University of Tsukuba (Univ. of Tsukuba)
5th Author's Name Y. Satoh  
5th Author's Affiliation University of Tsukuba (Univ. of Tsukuba)
6th Author's Name S. Harada  
6th Author's Affiliation AIST (AIST)
7th Author's Name Hajime Okumura  
7th Author's Affiliation AIST (AIST)
8th Author's Name T. Makino  
8th Author's Affiliation JAEA (JAEA)
9th Author's Name Takeshi Ohshima  
9th Author's Affiliation JAEA (JAEA)
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Speaker Author-1 
Date Time 2013-06-18 17:25:00 
Presentation Time 20 minutes 
Registration for SDM 
Paper # SDM2013-64 
Volume (vol) vol.113 
Number (no) no.87 
Page pp.101-105 
#Pages 5 
Date of Issue 2013-06-11 (SDM) 

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