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Paper Abstract and Keywords
Presentation 2013-06-18 09:00
Control of Pr-Oxide Crystalline Phase by Regulating Oxidant Partial Pressure and Si Diffusion
Kimihiko Kato, Mitsuo Sakashita, Wakana Takeuchi, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2013-44
Abstract (in Japanese) (See Japanese page) 
(in English) For realization of hexagonal Pr2O3 thin film as higher-k gate dielectrics, we have investigated the effect of H2O partial pressure (PH2O) during the Pr-oxide film formation and the Si diffusion into the Pr-oxide films on both the Pr valence state and the crystalline structure of the Pr-oxide films. The decrease in PH2O increases the ratio of Pr2O3 (Pr3+) phase to PrO2 (Pr4+) phase in the film, and it effectively increases the permittivity of the Pr-oxide film. At the same time, the PH2O value changes the grain size of hexagonal Pr2O3 in the amorphous Pr-oxide film. Therefore, PH2O during the Pr-oxide film formation by MOCVD at as low as 300°C strongly affects on the Pr valence state and crystalline structure of the Pr-oxide film. Also, the annealing of the Pr-oxide/SiO2/Si structure in vacuum promotes the crystallization of the hexagonal Pr2O3 phase, although the annealing in N2 ambient forms cubic Pr2O3 phase. The angle resolved XPS measurement reveals that the Si diffusion into the Pr-oxide film is suppressed with the annealing in vacuum compared to that in N2 ambient. It is concluded that both the control of oxygen concentration in the Pr-oxide film and the suppression of the Si diffusion into the Pr-oxide film is quite important to realize the high permittivity hexagonal Pr2O3 structure.
Keyword (in Japanese) (See Japanese page) 
(in English) Pr-oxide / crystalline structure / H2O partial pressure / Si diffusion / / / /  
Reference Info. IEICE Tech. Rep., vol. 113, no. 87, SDM2013-44, pp. 1-6, June 2013.
Paper # SDM2013-44 
Date of Issue 2013-06-11 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2013-06-18 - 2013-06-18 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Science and Technology for Dielectric Thin Films for Electron Devices 
Paper Information
Registration To SDM 
Conference Code 2013-06-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Control of Pr-Oxide Crystalline Phase by Regulating Oxidant Partial Pressure and Si Diffusion 
Sub Title (in English)  
Keyword(1) Pr-oxide  
Keyword(2) crystalline structure  
Keyword(3) H2O partial pressure  
Keyword(4) Si diffusion  
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Keyword(6)  
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1st Author's Name Kimihiko Kato  
1st Author's Affiliation Nagoya University (Nagoya Univ.)
2nd Author's Name Mitsuo Sakashita  
2nd Author's Affiliation Nagoya University (Nagoya Univ.)
3rd Author's Name Wakana Takeuchi  
3rd Author's Affiliation Nagoya University (Nagoya Univ.)
4th Author's Name Noriyuki Taoka  
4th Author's Affiliation Nagoya University (Nagoya Univ.)
5th Author's Name Osamu Nakatsuka  
5th Author's Affiliation Nagoya University (Nagoya Univ.)
6th Author's Name Shigeaki Zaima  
6th Author's Affiliation Nagoya University (Nagoya Univ.)
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Speaker Author-1 
Date Time 2013-06-18 09:00:00 
Presentation Time 20 minutes 
Registration for SDM 
Paper # SDM2013-44 
Volume (vol) vol.113 
Number (no) no.87 
Page pp.1-6 
#Pages 6 
Date of Issue 2013-06-11 (SDM) 

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