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Paper Abstract and Keywords
Presentation 2013-06-18 15:30
[Invited Lecture] Implementation of High-k Gate Dielectrics in SiC Power MOSFET
Takuji Hosoi (Osaka Univ.), Shuji Azumo, Yusaku Kashiwagi, Shigetoshi Hosaka (Tokyo Electron), Ryota Nakamura, Yuki Nakano, Hirokazu Asahara, Takashi Nakamura (ROHM), Tsunenobu Kimoto (Kyoto Univ.), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2013-59
Abstract (in Japanese) (See Japanese page) 
(in English) (Not available yet)
Keyword (in Japanese) (See Japanese page) 
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Reference Info. IEICE Tech. Rep., vol. 113, no. 87, SDM2013-59, pp. 77-80, June 2013.
Paper # SDM2013-59 
Date of Issue 2013-06-11 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2013-06-18 - 2013-06-18 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Science and Technology for Dielectric Thin Films for Electron Devices 
Paper Information
Registration To SDM 
Conference Code 2013-06-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Implementation of High-k Gate Dielectrics in SiC Power MOSFET 
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1st Author's Name Takuji Hosoi  
1st Author's Affiliation Osaka University (Osaka Univ.)
2nd Author's Name Shuji Azumo  
2nd Author's Affiliation Tokyo Electron Limited (Tokyo Electron)
3rd Author's Name Yusaku Kashiwagi  
3rd Author's Affiliation Tokyo Electron Limited (Tokyo Electron)
4th Author's Name Shigetoshi Hosaka  
4th Author's Affiliation Tokyo Electron Limited (Tokyo Electron)
5th Author's Name Ryota Nakamura  
5th Author's Affiliation ROHM (ROHM)
6th Author's Name Yuki Nakano  
6th Author's Affiliation ROHM (ROHM)
7th Author's Name Hirokazu Asahara  
7th Author's Affiliation ROHM (ROHM)
8th Author's Name Takashi Nakamura  
8th Author's Affiliation ROHM (ROHM)
9th Author's Name Tsunenobu Kimoto  
9th Author's Affiliation Kyoto University (Kyoto Univ.)
10th Author's Name Takayoshi Shimura  
10th Author's Affiliation Osaka University (Osaka Univ.)
11th Author's Name Heiji Watanabe  
11th Author's Affiliation Osaka University (Osaka Univ.)
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Speaker Author-1 
Date Time 2013-06-18 15:30:00 
Presentation Time 20 minutes 
Registration for SDM 
Paper # SDM2013-59 
Volume (vol) vol.113 
Number (no) no.87 
Page pp.77-80 
#Pages 4 
Date of Issue 2013-06-11 (SDM) 

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