Paper Abstract and Keywords |
Presentation |
2013-06-18 10:55
Mobility Enhancement for Ge p-MOSFET with Metal Source/Drain by Hf Introduction into Gate Stack Keisuke Yamamoto, Takahiro Sada, Dong Wang, Hiroshi Nakashima (Kyushu Univ.) SDM2013-49 Link to ES Tech. Rep. Archives: SDM2013-49 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Metal source/drain (S/D) with extremely low parasitic resistance is needed for high performance Ge CMOS. We found that HfGe/Ge contact shows characteristics suitable for metal S/D of p-MOSFET, and Ge p-MOSFET with HfGe/Ge metal S/D and Al/SiO2/GeO2/Ge gate stack worked successfully. Furthermore, the mobility was improved to 919 cm2/Vs by Hf introduction in gate stack. It can be explained by charge compensation in gate stack, which is expected to be an effective method to improve mobility of Ge MOSFET. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Ge / metal/Ge contact / metal source/drain / MOSFET / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 113, no. 87, SDM2013-49, pp. 29-32, June 2013. |
Paper # |
SDM2013-49 |
Date of Issue |
2013-06-11 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
SDM2013-49 Link to ES Tech. Rep. Archives: SDM2013-49 |
Conference Information |
Committee |
SDM |
Conference Date |
2013-06-18 - 2013-06-18 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Kikai-Shinko-Kaikan Bldg. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Science and Technology for Dielectric Thin Films for Electron Devices |
Paper Information |
Registration To |
SDM |
Conference Code |
2013-06-SDM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Mobility Enhancement for Ge p-MOSFET with Metal Source/Drain by Hf Introduction into Gate Stack |
Sub Title (in English) |
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Keyword(1) |
Ge |
Keyword(2) |
metal/Ge contact |
Keyword(3) |
metal source/drain |
Keyword(4) |
MOSFET |
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1st Author's Name |
Keisuke Yamamoto |
1st Author's Affiliation |
Kyushu University (Kyushu Univ.) |
2nd Author's Name |
Takahiro Sada |
2nd Author's Affiliation |
Kyushu University (Kyushu Univ.) |
3rd Author's Name |
Dong Wang |
3rd Author's Affiliation |
Kyushu University (Kyushu Univ.) |
4th Author's Name |
Hiroshi Nakashima |
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Kyushu University (Kyushu Univ.) |
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Speaker |
Author-1 |
Date Time |
2013-06-18 10:55:00 |
Presentation Time |
20 minutes |
Registration for |
SDM |
Paper # |
SDM2013-49 |
Volume (vol) |
vol.113 |
Number (no) |
no.87 |
Page |
pp.29-32 |
#Pages |
4 |
Date of Issue |
2013-06-11 (SDM) |