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Paper Abstract and Keywords
Presentation 2013-06-18 11:15
Impact of metal gate electrodes on electrical properties of InGaAs MOS gate stacks
Chih-Yu Chang, Masafumi Yokoyama, Sang-Hyeon Kim (Univ. of Tokyo), Osamu Ichikawa, Takenori Osada, Masahiko Hata (Sumitomo Chemical), Mitsuru Takenaka, Shinichi Takagi (Univ. of Tokyo) SDM2013-50
Abstract (in Japanese) (See Japanese page) 
(in English) Electrical properties of Al2O3 and HfO2/InGaAs metal-oxide-semiconductor (MOS) capacitors with Al, Au and Pd gate electrodes have been evaluated in order to study the impact of metal gate electrodes on gate dielectrics and interface properties. It is found that MOS capacitors with Pd gate electrode can provide thinnest capacitance-equivalent-thickness (CET) and better HfO2/InGaAs MOS interfaces than those with Al and Au. However, the Al2O3/InGaAs interface properties are better in Au and Al gate electrodes than in Pd. Thus, the combination of high-k and gate metals must be carefully examined for realizing optimum gate stacks.
Keyword (in Japanese) (See Japanese page) 
(in English) InGaAs / Metal gate electrodes / High-k dielectrics / Interface state density / / / /  
Reference Info. IEICE Tech. Rep., vol. 113, no. 87, SDM2013-50, pp. 33-37, June 2013.
Paper # SDM2013-50 
Date of Issue 2013-06-11 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2013-06-18 - 2013-06-18 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Science and Technology for Dielectric Thin Films for Electron Devices 
Paper Information
Registration To SDM 
Conference Code 2013-06-SDM 
Language English (Japanese title is available) 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Impact of metal gate electrodes on electrical properties of InGaAs MOS gate stacks 
Sub Title (in English)  
Keyword(1) InGaAs  
Keyword(2) Metal gate electrodes  
Keyword(3) High-k dielectrics  
Keyword(4) Interface state density  
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1st Author's Name Chih-Yu Chang  
1st Author's Affiliation The University of Tokyo (Univ. of Tokyo)
2nd Author's Name Masafumi Yokoyama  
2nd Author's Affiliation The University of Tokyo (Univ. of Tokyo)
3rd Author's Name Sang-Hyeon Kim  
3rd Author's Affiliation The University of Tokyo (Univ. of Tokyo)
4th Author's Name Osamu Ichikawa  
4th Author's Affiliation Sumitomo Chemical Corporation Ltd. (Sumitomo Chemical)
5th Author's Name Takenori Osada  
5th Author's Affiliation Sumitomo Chemical Corporation Ltd. (Sumitomo Chemical)
6th Author's Name Masahiko Hata  
6th Author's Affiliation Sumitomo Chemical Corporation Ltd. (Sumitomo Chemical)
7th Author's Name Mitsuru Takenaka  
7th Author's Affiliation The University of Tokyo (Univ. of Tokyo)
8th Author's Name Shinichi Takagi  
8th Author's Affiliation The University of Tokyo (Univ. of Tokyo)
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Speaker Author-1 
Date Time 2013-06-18 11:15:00 
Presentation Time 20 minutes 
Registration for SDM 
Paper # SDM2013-50 
Volume (vol) vol.113 
Number (no) no.87 
Page pp.33-37 
#Pages 5 
Date of Issue 2013-06-11 (SDM) 

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