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Paper Abstract and Keywords
Presentation 2013-06-18 15:50
[Invited Lecture] Challenges of high-reliability in SiC-MOS gate structures
Junji Senzaki, Atsushi Shimozato, Yasunori Tanaka, Hajime Okumura (AIST) SDM2013-60
Abstract (in Japanese) (See Japanese page) 
(in English) Influences of wafer-related defect and gate oxide fabrication process on MOS characteristics with gate oxides thermally grown on 4H-SiC wafer have been investigated for a realization of high-performance and high-reliable SiC-MOS power devices. The SiC-MOS characteristics depend on the gate oxide fabrication process, and are improved by the increase of DRY oxidation temperature and the applying of nitridation and hydrogen treatments. In addition, it was clearly shown that predominant origins of SiC-MOS reliability degradation are wafer-related defects such as dislocations and epitaxial surface defects. Moreover, the planarization of SiC epitaxial layer surface using a chemical mechanical polishing treatment is effective technique for the improvement of SiC-MOS reliability.
Keyword (in Japanese) (See Japanese page) 
(in English) Silicon carbide / MOSFET / Thermal oxide / Channel mobility / Reliability / Dislocation / CMP / Surface roughness  
Reference Info. IEICE Tech. Rep., vol. 113, no. 87, SDM2013-60, pp. 81-86, June 2013.
Paper # SDM2013-60 
Date of Issue 2013-06-11 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2013-06-18 - 2013-06-18 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Science and Technology for Dielectric Thin Films for Electron Devices 
Paper Information
Registration To SDM 
Conference Code 2013-06-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Challenges of high-reliability in SiC-MOS gate structures 
Sub Title (in English)  
Keyword(1) Silicon carbide  
Keyword(2) MOSFET  
Keyword(3) Thermal oxide  
Keyword(4) Channel mobility  
Keyword(5) Reliability  
Keyword(6) Dislocation  
Keyword(7) CMP  
Keyword(8) Surface roughness  
1st Author's Name Junji Senzaki  
1st Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
2nd Author's Name Atsushi Shimozato  
2nd Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
3rd Author's Name Yasunori Tanaka  
3rd Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
4th Author's Name Hajime Okumura  
4th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
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Speaker Author-1 
Date Time 2013-06-18 15:50:00 
Presentation Time 20 minutes 
Registration for SDM 
Paper # SDM2013-60 
Volume (vol) vol.113 
Number (no) no.87 
Page pp.81-86 
#Pages 6 
Date of Issue 2013-06-11 (SDM) 

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